PartNumber | SPD02N60C3BTMA1 | SPD02N50C3 | SPD02N50C3BTMA1 |
Description | MOSFET LOW POWER_LEGACY | IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 | LOW POWER_LEGACY |
Manufacturer | Infineon | INFINEON | - |
Product Category | MOSFET | FETs - Single | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP000308771 SPD02N60C3 SPD02N60C3XT | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Series | - | CoolMOS C3 | - |
Part Aliases | - | SP000313942 SPD02N50C3BTMA1 SPD02N50C3XT | - |
Package Case | - | TO-252-3 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 25 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 15 ns | - |
Rise Time | - | 5 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 1.8 A | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Rds On Drain Source Resistance | - | 3 Ohms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 70 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |
Channel Mode | - | Enhancement | - |