SPD02N60C3BTMA1

Mfr. #:: SPD02N60C3BTMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET LOW POWER_LEGACY
Lifecycle:: New from this manufacturer.
Datasheet:: SPD02N60C3BTMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Tradename:: CoolMOS

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Width:: 6.22 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Subcategory:: MOSFETs

Part # Aliases:: SP000308771 SPD02N60C3 SPD02N60C3XT

Unit Weight:: 0.139332 oz

Tags: SPD02N60C3, SPD02N60C, SPD02N6, SPD02N, SPD02, SPD0, SPD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD02N60C3BTMA1 Description

***p One Stop Global: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N, COOLMOS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:D-PAK; Avalanche Single Pulse Energy Eas:50mJ; Current Iar:1.8A; Current Id Max:1.8A; Current Idss Max:1µA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:3ohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Power Dissipation Ptot Max:25W; Pulse Current Idm:5.4A; Rate of Voltage Change dv / dt:50V/ns; Repetitive Avalanche Energy Max:0.07mJ; Termination Type:SMD; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***ure Electronics: N-Channel 560 V 3 Ohm Cool MOS Power Transistor - PG-TO252-3

***nell: MOSFET, N, 500V, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***ure Electronics: Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS Power Mosfet - PG-TO252-3

***roFlash: Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2A; On Resistance Rds(On):2.4Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:3Pins Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 2.7 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42

***ineon: 800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

***ineon SCT: Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS

***Yang: Transistor MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R - Tape and Reel

***ark: Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***(Formerly Allied Electronics): SFT1423-TL-E N-channel MOSFET Transistor; 2 A; 500 V; 3-Pin TP-FA

***emi: N-Channel Power MOSFET, 500V, 2A, 4.9Ω, Single TP/TP-FA

***Yang: Trans MOSFET N-CH 500V 2A 3-Pin(2+Tab) TP-FA T/R - Tape and Reel

***r Electronics: Small Signal Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

*** Services: CoC and 2-years warranty / RFQ for pricing

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

Part #	Mfg.	Description	Stock	Price
SPD02N60C3BTMA1 DISTI # 31645194	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.4132
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SPD02N60C3 DISTI # 726-SPD02N60C3	Infineon Technologies AG	MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant	0
SPD02N60C3BTMA1 DISTI # 1156419RL	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	10000:$0.6080 2500:$0.6280 1000:$0.7080 500:$0.8980 100:$1.0200 10:$1.3300 1:$1.5700
SPD02N60C3BTMA1 DISTI # 1156419	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	10000:$0.6080 2500:$0.6280 1000:$0.7080 500:$0.8980 100:$1.0200 10:$1.3300 1:$1.5700

Image	Part #	Description
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: SPD02N60S5 OMO.#: OMO-SPD02N60S5-126	IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5
	Mfr.#: SPD02N60 OMO.#: OMO-SPD02N60-1190	New and Original
	Mfr.#: SPD02N60C3 OMO.#: OMO-SPD02N60C3-1190	Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
	Mfr.#: SPD02N60C3(02N60C3) OMO.#: OMO-SPD02N60C3-02N60C3--1190	New and Original
	Mfr.#: SPD02N60C3,02N60C3 OMO.#: OMO-SPD02N60C3-02N60C3-1190	New and Original
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 1.8A DPAK
	Mfr.#: SPD02N60C3_05 OMO.#: OMO-SPD02N60C3-05-1190	New and Original
	Mfr.#: SPD02N60C5 OMO.#: OMO-SPD02N60C5-1190	New and Original
	Mfr.#: SPD02N60S5BTMA1 OMO.#: OMO-SPD02N60S5BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 1.8A TO-252

SPD02N60C3BTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes