SPD02N60C3

Mfr. #:: SPD02N60C3
Manufacturer:: Rochester Electronics, LLC
Description:: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Lifecycle:: New from this manufacturer.
Datasheet:: SPD02N60C3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: INFINEON

Product Category: FETs - Single

Series: CoolMOS C3

Packaging: Reel

Part-Aliases: SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Tradename: CoolMOS

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 25 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 12 ns

Rise-Time: 3 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 1.8 A

Vds-Drain-Source-Breakdown-Voltage: 600 V

Rds-On-Drain-Source-Resistance: 3 Ohms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 68 ns

Typical-Turn-On-Delay-Time: 6 ns

Channel-Mode: Enhancement

Tags: SPD02N60C3, SPD02N60C, SPD02N6, SPD02N, SPD02, SPD0, SPD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD02N60C3 Description

***ical: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252 T/R

***p One Stop Global: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R

***ark: Mosfet, N Channel, 650V, 1.8A, To-252-3

***i-Key: MOSFET N-CH 650V 1.8A DPAK

***ronik: N-CH 600V 1.8A 3000mOhm TO252-3

***ponent Sense: TRA POWER SPD02N60C3 DPAK-3

***et: LOW POWER_PRICE/PERFORM

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***nell: MOSFET, N, COOLMOS, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Iar:1.8A; Corrente Id Max:1.8A; Corrente Idss Max:1µA; Corrente di Impulso Idm:5.4A; Dissipazione di Potenza Ptot Max:25W; Energia Max Avalanche Repetitiva:0.07mJ; Energia Singolo Impulso Avalanche Eas:50mJ; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Livello Temperatura a Piena Potenza:25°C; Modello Case Alternativo:D-PAK; No. di Transistor:1; Resistenza Stato On Max:3ohm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C

***ment14 APAC: Prices include import duty and tax. MOSFET, N, COOLMOS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:D-PAK; Avalanche Single Pulse Energy Eas:50mJ; Current Iar:1.8A; Current Id Max:1.8A; Current Idss Max:1µA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:3ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:25W; Pulse Current Idm:5.4A; Rate of Voltage Change dv / dt:50V/ns; Repetitive Avalanche Energy Max:0.07mJ; Termination Type:Surface Mount Device; Voltage Vds Typ:650V

Market price

Part #	Mfg.	Description	Stock	Price
SPD02N60C3BTMA1 DISTI # 26943265	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	15000	10000:$0.4689 5000:$0.4909 2500:$0.5512
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # C1S322000355848	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	15000	2500:$0.5440
SPD02N60C3BTMA1 DISTI # 59M2072	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 1.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):2.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0
SPD02N60C3	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	6	1000:$0.4400 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5400
SPD02N60C3 DISTI # 726-SPD02N60C3	Infineon Technologies AG	MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant	0
SPD02N60C3	Infineon Technologies AG	RoHS: Compliant	Europe - 445
SPD02N60C3BTMA1 DISTI # 1156419RL	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.8980 1000:$0.7080 2500:$0.6280 10000:$0.6040 25000:$0.6030
SPD02N60C3BTMA1 DISTI # 1156419	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.8980 1000:$0.7080 2500:$0.6280 10000:$0.6040 25000:$0.6030

Related products

Image	Part #	Description
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: SPD02N60S5 OMO.#: OMO-SPD02N60S5-126	IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5
	Mfr.#: SPD02N50C3 OMO.#: OMO-SPD02N50C3-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3 OMO.#: OMO-SPD02N80C3-126	IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3BTMA1 OMO.#: OMO-SPD02N80C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 2A TO-252
	Mfr.#: SPD02N50C3BTMA1 OMO.#: OMO-SPD02N50C3BTMA1-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: SPD02N60 OMO.#: OMO-SPD02N60-1190	New and Original
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 1.8A DPAK
	Mfr.#: SPD02N80C3. OMO.#: OMO-SPD02N80C3--1190	New and Original
	Mfr.#: SPD02U60C3 OMO.#: OMO-SPD02U60C3-1190	New and Original

Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of SPD02N60C3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.60~~; ~~$0.60~~

10: ~~$0.57~~; ~~$5.70~~

100: ~~$0.54~~; ~~$54.00~~

500: ~~$0.51~~; ~~$255.00~~

1000: ~~$0.48~~; ~~$480.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SPD02N60C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes