We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A DPAK Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A DPAK Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SPD02N60C3BTMA1 DISTI # 31645194 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 2500 |
|
| SPD02N60C3 DISTI # SPD02N60C3 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R - Bulk (Alt: SPD02N60C3) RoHS: Not Compliant Min Qty: 834 Container: Bulk | Americas - 0 |
|
| SPD02N60C3 | Infineon Technologies AG | CoolMOS, 1.8A I(D), 600V, 3ohm, N-Channel, Power MOSFET RoHS: Compliant | 6 |
|
| SPD02N60C3 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | Europe - 445 | |
| SPD02N60C3 | ISC | DPAK/TO-252 | 5000 | |
| SPD02N60C3BTMA1 DISTI # 1156419RL | Infineon Technologies AG | MOSFET, N, COOLMOS, D-PAK RoHS: Compliant | 0 |
|
| SPD02N60C3BTMA1 DISTI # 1156419 | Infineon Technologies AG | MOSFET, N, COOLMOS, D-PAK RoHS: Compliant | 0 |
|
| SPD02N60C3BTMA1 DISTI # 1156419RL | Infineon Technologies AG | MOSFET, N, COOLMOS, D-PAK RoHS: Compliant | 0 |
|
| SPD02N60C3BTMA1 DISTI # 1156419 | Infineon Technologies AG | MOSFET, N, COOLMOS, D-PAK RoHS: Compliant | 0 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: SPD02N80C3 OMO.#: OMO-SPD02N80C3-126 |
IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3 |
|
|
Mfr.#: SPD02N80C3ATMA1-CUT TAPE |
New and Original |
|
Mfr.#: SPD02N80C3ATMA1 |
MOSFET N-CH 800V 2A 3TO252 |
|
|
Mfr.#: SPD02N50C3BTMA1 |
LOW POWER_LEGACY |
|
|
Mfr.#: SPD02N60C3 OMO.#: OMO-SPD02N60C3-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: SPD02N60C3,02N60C3 OMO.#: OMO-SPD02N60C3-02N60C3-1190 |
New and Original |
|
|
Mfr.#: SPD02N60C3BTMA1 |
MOSFET N-CH 650V 1.8A DPAK |
|
|
Mfr.#: SPD02N60S5BTMA1 |
MOSFET N-CH 600V 1.8A TO-252 |
|
|
Mfr.#: SPD02N80C3. OMO.#: OMO-SPD02N80C3--1190 |
New and Original |
|
|
Mfr.#: SPD02U60C3 OMO.#: OMO-SPD02U60C3-1190 |
New and Original |