PartNumber | SPD02N60 | SPD02N60C3 | SPD02N60C3(02N60C3) |
Description | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
Manufacturer | Infineon | INFINEON | - |
Product Category | FETs - Single | FETs - Single | - |
Series | - | CoolMOS C3 | - |
Packaging | - | Reel | - |
Part Aliases | - | SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT | - |
Unit Weight | - | 0.139332 oz | - |
Mounting Style | - | SMD/SMT | - |
Tradename | - | CoolMOS | - |
Package Case | - | TO-252-3 | - |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 25 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 12 ns | - |
Rise Time | - | 3 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 1.8 A | - |
Vds Drain Source Breakdown Voltage | - | 600 V | - |
Rds On Drain Source Resistance | - | 3 Ohms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 68 ns | - |
Typical Turn On Delay Time | - | 6 ns | - |
Channel Mode | - | Enhancement | - |