 | | | |
| PartNumber | SPD02N60C3 | SPD02N60C3(02N60C3) | SPD02N60C3,02N60C3 |
| Description | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| Manufacturer | INFINEON | - | - |
| Product Category | FETs - Single | - | - |
| Series | CoolMOS C3 | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 12 ns | - | - |
| Rise Time | 3 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.8 A | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 68 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD02N60C3BTMA1 | MOSFET LOW POWER_LEGACY | |
| SPD02N60C3 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| SPD02N60C3(02N60C3) | New and Original | ||
| SPD02N60C3,02N60C3 | New and Original | ||
| SPD02N60C3_05 | New and Original | ||
| SPD02N60C5 | New and Original | ||
Infineon Technologies |
SPD02N60C3BTMA1 | MOSFET N-CH 650V 1.8A DPAK |