GA20JT12-263

GA20JT12-263
Mfr. #:
GA20JT12-263
Manufacturer:
GeneSiC Semiconductor
Description:
MOSFET 1200V 45A Standard
Lifecycle:
New from this manufacturer.
Datasheet:
GA20JT12-263 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
GA20JT12-263 more Information
Product Attribute
Attribute Value
Manufacturer:
GeneSiC Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
SMD/SMT
Package / Case:
TO-263-7
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1.2 kV
Id - Continuous Drain Current:
45 A
Rds On - Drain-Source Resistance:
50 mOhms
Vgs - Gate-Source Voltage:
3.44 V
Qg - Gate Charge:
104 nC
Pd - Power Dissipation:
282 W
Channel Mode:
Enhancement
Packaging:
Reel
Series:
GA20JT12
Brand:
GeneSiC Semiconductor
Fall Time:
15 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
15 ns
Unit Weight:
0.056438 oz
Tags
GA20, GA2
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
SIC JUNCTION TRANS, 1.2KV, 20A, TO-263
***i-Key
TRANS SJT 1200V 45A
GA20JT12 SiC Carbide Junction Transistors
GeneSiC GA20JT12 SiC Carbide Junction Transistors (SJT) are "Super-High" current gain SiC BJTs developed in 1200V to 10kV ratings. These SJTs are normally-off, compatible with standard MOSFET/IGBT drivers, and have the best temperature-independent switching and blocking performance. The GA20JT12 transistors operate at 175ºC (maximum), provide excellent gain linearity and low output capacitance. Features include gate oxide free SiC switch, optional gate return pin, and suitability for connecting an anti-parallel diode. The GA20JT12 advantages are >20µs short-circuit withstand capability and high amplifier bandwidth. Applications include down-hole oil drilling, motor drives, solar inverters, and induction heating.Learn more
Part # Mfg. Description Stock Price
GA20JT12-263
DISTI # 1242-1189-ND
GeneSic Semiconductor IncTRANS SJT 1200V 45A
RoHS: Compliant
Min Qty: 1
Container: Tube
252In Stock
  • 100:$31.8388
  • 50:$34.2570
  • 10:$37.2800
  • 1:$40.3000
GA20JT12-263
DISTI # 905-GA20JT12-263
GeneSic Semiconductor IncMOSFET 1200V 45A Standard
RoHS: Compliant
26
  • 1:$35.9200
  • 5:$34.1500
  • 10:$33.2300
  • 25:$32.3100
  • 50:$30.5400
  • 100:$28.3800
  • 250:$26.0500
Image Part # Description
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OMO.#: OMO-NTHL080N120SC1

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Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

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Mfr.#: SCS220AJHRTLL

OMO.#: OMO-SCS220AJHRTLL

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Mfr.#: SCS215AJHRTLL

OMO.#: OMO-SCS215AJHRTLL

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Mfr.#: IDDD10G65C6XTMA1

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Mfr.#: IDDD04G65C6XTMA1

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V8PM10SHM3/H

Mfr.#: V8PM10SHM3/H

OMO.#: OMO-V8PM10SHM3-H

Schottky Diodes & Rectifiers 100V 8A TMBS AEC-Q101 Qualified
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263

MOSFET 1200V 25A Std SIC CoPak
SCT3080KLGC11

Mfr.#: SCT3080KLGC11

OMO.#: OMO-SCT3080KLGC11

MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
SCT3080KLGC11

Mfr.#: SCT3080KLGC11

OMO.#: OMO-SCT3080KLGC11-ROHM-SEMI

MOSFET NCH 1.2KV 31A TO247N
Availability
Stock:
25
On Order:
2008
Enter Quantity:
Current price of GA20JT12-263 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$39.51
$39.51
5
$37.55
$187.75
10
$36.55
$365.50
25
$35.53
$888.25
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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