RM2N650LD-T

Mfr. #:: RM2N650LD-T
Manufacturer:: Rectron
Description:: MOSFET D-PAK MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: RM2N650LD-T Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Rectron

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 2 A

Rds On - Drain-Source Resistance:: 2.5 Ohms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 10 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 23 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Rectron

Forward Transconductance - Min:: 2 S

Fall Time:: 11 ns

Product Type:: MOSFET

Rise Time:: 3 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 65 ns

Typical Turn-On Delay Time:: 6 ns

Tags: RM2N, RM2

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RM2N650LD-T

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RM2N650LD-T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes