RM2N650IP

Product Attribute

Attribute Value

Manufacturer:

Rectron

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

2 A

Rds On - Drain-Source Resistance:

2.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

10 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

23 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Rectron

Forward Transconductance - Min:

2 S

Fall Time:

11 ns

Product Type:

MOSFET

Rise Time:

3 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

65 ns

Typical Turn-On Delay Time:

6 ns

Tags

RM2N, RM2