PartNumber | RM2N650IP | RM2N650LD-T | RM2N650LD |
Description | MOSFET TO-251 MOSFET | MOSFET D-PAK MOSFET | |
Manufacturer | Rectron | Rectron | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | TO-251-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 2 A | 2 A | - |
Rds On Drain Source Resistance | 2.5 Ohms | 2.5 Ohms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 10 nC | 10 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 23 W | 23 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Reel | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Rectron | Rectron | - |
Forward Transconductance Min | 2 S | 2 S | - |
Fall Time | 11 ns | 11 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3 ns | 3 ns | - |
Factory Pack Quantity | 800 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 65 ns | 65 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |