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IRFB33N15DPBF

IRFB33N15DPBF
Mfr. #:
IRFB33N15DPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFB33N15DPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB33N15DPBF DatasheetIRFB33N15DPBF Datasheet (P4-P6)IRFB33N15DPBF Datasheet (P7-P9)IRFB33N15DPBF Datasheet (P10-P12)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
33 A
Rds On - Drain-Source Resistance:
56 mOhms
Vgs th - Gate-Source Threshold Voltage:
5.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
60 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
3.8 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Type:
Smps MOSFET
Width:
4.4 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
14 S
Fall Time:
21 ns
Product Type:
MOSFET
Rise Time:
38 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
SP001566470
Unit Weight:
0.211644 oz
Tags
IRFB33N15DP, IRFB33N, IRFB33, IRFB3, IRFB, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 Infineon IRFB33N15DPBF
***ure Electronics
Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ical
Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB
***ied Electronics & Automation
MOSFET, 150V, 33A, 56 MOHM, 60 NC QG, TO-220AB
***th Star Micro
MOSFET N-CH 150V 33A TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):56mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N, 150V, 33A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:33A; Resistance, Rds On:0.056ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:130A; Power Dissipation:170W; Power, Pd:170W; Resistance, Rds on @ Vgs = 10V:56ohm; Thermal Resistance, Junction to Case A:0.9°C/W; Voltage, Vds Max:150V
***ment14 APAC
N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
IRFB33N15DPBF
DISTI # 23822492		Infineon Technologies AGTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		890
  • 500:$0.6725
  • 250:$0.6864
  • 100:$0.7056
  • 25:$0.8688
IRFB33N15DPBF
DISTI # IRFB33N15DPBF-ND		Infineon Technologies AGMOSFET N-CH 150V 33A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		229In Stock
  • 1000:$0.9969
  • 500:$1.2031
  • 100:$1.5469
  • 10:$1.9250
  • 1:$2.1300
IRFB33N15DPBF
DISTI # C1S322000488429		Infineon Technologies AGTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		890
  • 500:$1.2000
  • 100:$1.3100
  • 25:$1.5900
  • 5:$1.9700
IRFB33N15DPBF
DISTI # IRFB33N15DPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB33N15DPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.7199
  • 5000:$0.6939
  • 8000:$0.6689
  • 15000:$0.6459
  • 30000:$0.6349
IRFB33N15DPBF
DISTI # SP001566470		Infineon Technologies AGTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB (Alt: SP001566470)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.1499
  • 10:€1.0219
  • 25:€0.9199
  • 50:€0.8359
  • 100:€0.7659
  • 500:€0.7069
  • 1000:€0.6569
IRFB33N15DPBF
DISTI # 63J6715		Infineon Technologies AGN CHANNEL MOSFET, 150V, 33A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes2131
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 2500:$0.8440
  • 5000:$0.8130
IRFB33N15DPBF
DISTI # 70018289		Infineon Technologies AGIRFB33N15DPBF N-channel MOSFET Transistor,33 A,150 V,3-Pin TO-220
RoHS: Compliant		0
  • 3000:$3.2800
IRFB33N15DPBFInternational RectifierPower Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		515
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
IRFB33N15DPBF
DISTI # 942-IRFB33N15DPBF		Infineon Technologies AGMOSFET 150V 1 N-CH HEXFET 56mOhms 60nC
RoHS: Compliant		3470
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 2000:$0.8440
  • 5000:$0.8130
  • 10000:$0.7820
IRFB33N15DPBF
DISTI # 9075081P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 150V 33A TO220AB, TU2625
  • 25:£0.5940
IRFB33N15DPBFInternational Rectifier 
RoHS: Compliant		Europe - 100
    IRFB33N15DPBF
    DISTI # 8657947    		Infineon Technologies AGMOSFET, N, 150V, 33A, TO-220
    RoHS: Compliant    		2134
    • 1:$2.9100
    • 10:$2.4900
    • 100:$1.9800
    • 500:$1.7500
    • 1000:$1.4400
    • 2000:$1.4100
    IRFB33N15DPBF
    DISTI # XSLY00000000910    		INFINEON/IRTO-220AB
    RoHS: Compliant    		1116
    • 950:$0.7571
    • 1116:$0.7067
    IRFB33N15DPBF
    DISTI # 8657947    		Infineon Technologies AGMOSFET, N, 150V, 33A, TO-220
    RoHS: Compliant    		2156
    • 1:£0.8580
    • 10:£0.7050
    • 100:£0.7040
    • 250:£0.7030
    • 500:£0.7020
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    Availability
    Stock:
    Available
    On Order:
    1986
    Enter Quantity:
    Current price of IRFB33N15DPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.83
    $1.83
    10
    $1.56
    $15.60
    100
    $1.25
    $125.00
    500
    $1.09
    $545.00
    1000
    $0.91
    $907.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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