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PD55025-E

PD55025-E
Mfr. #:
PD55025-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
Lifecycle:
New from this manufacturer.
Datasheet:
PD55025-E Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
PD55025-E more Information PD55025-E Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
RF MOSFET Transistors
RoHS:
Y
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
7 A
Vds - Drain-Source Breakdown Voltage:
40 V
Gain:
14.5 dB
Output Power:
25 W
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
PowerSO-10RF-Formed-4
Packaging:
Tube
Configuration:
Single
Height:
3.5 mm
Length:
7.5 mm
Operating Frequency:
1 GHz
Series:
PD55025-E
Type:
RF Power MOSFET
Width:
9.4 mm
Brand:
STMicroelectronics
Channel Mode:
Enhancement
Moisture Sensitive:
Yes
Pd - Power Dissipation:
79 W
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
20 V
Unit Weight:
0.105822 oz
Tags
PD55025, PD5502, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***roFlash
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***nell
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:4.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
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SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor; 6.5 A; 40 V; 8-Pin SOIC
***et Europe
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***enic
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***ment14 APAC
MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, P Channel:-40V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.021ohm; Power Dissipation Pd:3.2W
***emi
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*** Stop Electro
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***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
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***emi
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***Yang
Trans MOSFET N-CH 40V 7.6A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
These N-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V
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Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R / MOSFET N-CH 40V 9A 8-SOIC
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipati
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***emi
P-Channel PowerTrench® MOSFET, 40V, -8.2A, 27mΩ
*** Source Electronics
MOSFET P-CH 40V 8.2A 8SOIC / Trans MOSFET P-CH 40V 8.2A 8-Pin SOIC T/R
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
***nell
MOSFET, P CH, 40V, 8.2A, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:1.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -8.2 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5
Part # Mfg. Description Stock Price
PD55025-E
DISTI # 29496935		STMicroelectronicsTrans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		200
  • 250:$20.6592
  • 100:$21.6576
  • 50:$24.2208
PD55025-E
DISTI # 497-5301-5-ND		STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 400
Container: Tube		Temporarily Out of Stock
  • 400:$21.5180
PD55025-E
DISTI # PD55025-E		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD55025-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$22.1900
  • 800:$21.1900
  • 1600:$20.1900
  • 2400:$19.2900
  • 4000:$18.8900
PD55025-E
DISTI # 511-PD55025-E		STMicroelectronicsRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
RoHS: Compliant		384
  • 1:$28.6400
  • 5:$28.3500
  • 10:$26.4200
  • 25:$25.2300
  • 100:$22.5600
  • 250:$21.5200
PD55025TR-E
DISTI # 511-PD55025TR-E		STMicroelectronicsRF MOSFET Transistors RF Power Trans N-Channel
RoHS: Compliant		0
  • 1:$28.6400
  • 5:$28.3500
  • 10:$26.4200
  • 25:$25.2300
  • 100:$22.5600
  • 250:$21.5200
  • 600:$20.4900
PD55025-E
DISTI # PD55025-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 400:$21.5400
  • 500:$20.3800
  • 1000:$19.3500
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Mfr.#: PIC18F25Q10T-I/SS

OMO.#: OMO-PIC18F25Q10T-I-SS-MICROCHIP-TECHNOLOGY

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PD55015-E

Mfr.#: PD55015-E

OMO.#: OMO-PD55015-E-STMICROELECTRONICS

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C0603C103K5RACAUTO7411

Mfr.#: C0603C103K5RACAUTO7411

OMO.#: OMO-C0603C103K5RACAUTO7411-1190

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NCP4306AADZZZAMN1TBG

Mfr.#: NCP4306AADZZZAMN1TBG

OMO.#: OMO-NCP4306AADZZZAMN1TBG-ON-SEMICONDUCTOR

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OMO.#: OMO-FTAS00-10-4AS-4A-NKK-SWITCHES

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Availability
Stock:
111
On Order:
2094
Enter Quantity:
Current price of PD55025-E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$28.64
$28.64
5
$28.35
$141.75
10
$26.42
$264.20
25
$25.23
$630.75
100
$22.56
$2 256.00
250
$21.52
$5 380.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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