STB185N55F3

STB185N55F3
Mfr. #:
STB185N55F3
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 500V 0.40 11A Pwr MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
STB185N55F3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STB185N55F3 DatasheetSTB185N55F3 Datasheet (P4-P6)STB185N55F3 Datasheet (P7-P9)STB185N55F3 Datasheet (P10-P12)STB185N55F3 Datasheet (P13-P14)
ECAD Model:
More Information:
STB185N55F3 more Information STB185N55F3 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
120 A
Rds On - Drain-Source Resistance:
3.8 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
330 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.6 mm
Length:
10.4 mm
Series:
STB185N55F3
Transistor Type:
1 N-Channel
Width:
9.35 mm
Brand:
STMicroelectronics
Fall Time:
50 ns
Product Type:
MOSFET
Rise Time:
150 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
110 ns
Typical Turn-On Delay Time:
25 ns
Unit Weight:
0.139332 oz
Tags
STB18, STB1, STB
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 55 V, 3.2 mOhm typ., 120 A STripFET Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N CH, 55V, 120A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 330W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
Part # Mfg. Description Stock Price
STB185N55F3
DISTI # 497-7940-2-ND
STMicroelectronicsMOSFET N-CH 55V 120A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    STB185N55F3
    DISTI # 497-7940-1-ND
    STMicroelectronicsMOSFET N-CH 55V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      STB185N55F3
      DISTI # 497-7940-6-ND
      STMicroelectronicsMOSFET N-CH 55V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        STB185N55F3STMicroelectronics 256
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          MOSFET N-CH 55V 120A D2PAK
          STB18N20

          Mfr.#: STB18N20

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          New and Original
          Availability
          Stock:
          Available
          On Order:
          1500
          Enter Quantity:
          Current price of STB185N55F3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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