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SI4126DY-T1-GE3

SI4126DY-T1-GE3
Mfr. #:
SI4126DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SI4126DY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4126DY-T1-GE3 DatasheetSI4126DY-T1-GE3 Datasheet (P4-P6)SI4126DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI4126DY-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
39 A
Rds On - Drain-Source Resistance:
2.75 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
70 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
7.8 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI4
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
75 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
43 ns
Typical Turn-On Delay Time:
15 ns
Part # Aliases:
SI4126DY-GE3
Unit Weight:
0.006596 oz
Tags
SI4126DY-T, SI4126D, SI4126, SI412, SI41, SI4
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.00275 Ohm Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:39000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI4126DY-T1-GE3
DISTI # V72:2272_09215532		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R0
    SI4126DY-T1-GE3
    DISTI # V36:1790_09215532    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R0
    • 2500000:$1.3090
    • 1250000:$1.3100
    • 250000:$1.3320
    • 25000:$1.3570
    • 2500:$1.3610
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$1.0920
    • 2500:$1.1340
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2545
    • 500:$1.5141
    • 100:$1.8429
    • 10:$2.2930
    • 1:$2.5500
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2545
    • 500:$1.5141
    • 100:$1.8429
    • 10:$2.2930
    • 1:$2.5500
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4126DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
      SI4126DY-T1-GE3
      DISTI # SI4126DY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R (Alt: SI4126DY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.5919
      • 15000:€0.6179
      • 10000:€0.6999
      • 5000:€0.8629
      • 2500:€1.2029
      SI4126DY-T1-GE3
      DISTI # SI4126DY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R (Alt: SI4126DY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Asia - 0
        SI4126DY-T1-GE3
        DISTI # 16P3727        		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 39A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes0
        • 1:$1.4100
        • 2500:$1.4100
        SI4126DY-T1-GE3
        DISTI # 18X0010        		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 39A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
        • 500:$1.4900
        • 250:$1.7300
        • 100:$1.9900
        • 50:$2.2300
        • 25:$2.4700
        • 10:$2.6700
        • 1:$2.8000
        SI4126DY-T1-GE3
        DISTI # 781-SI4126DY-T1-GE3        		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
        RoHS: Compliant        		0
        • 1:$2.4800
        • 10:$2.0600
        • 100:$1.6000
        • 500:$1.4000
        • 1000:$1.1500
        • 2500:$1.0800
        • 5000:$1.0400
        SI4126DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8Americas - Stock
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          Availability
          Stock:
          Available
          On Order:
          1984
          Enter Quantity:
          Current price of SI4126DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $2.48
          $2.48
          10
          $2.06
          $20.60
          100
          $1.60
          $160.00
          500
          $1.40
          $700.00
          1000
          $1.15
          $1 150.00
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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