MRFE8VP8600HSR5

MRFE8VP8600HSR5
Mfr. #:
MRFE8VP8600HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
Lifecycle:
New from this manufacturer.
Datasheet:
MRFE8VP8600HSR5 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
RoHS:
Y
Transistor Polarity:
Dual N-Channel
Technology:
Si
Id - Continuous Drain Current:
2.8 A
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 115 V
Gain:
21 dB
Output Power:
140 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
NI-1230S-4S
Packaging:
Reel
Operating Frequency:
470 MHz to 860 MHz
Series:
MRFE8VP8600H
Type:
RF Power MOSFET
Brand:
NXP / Freescale
Number of Channels:
2 Channel
Pd - Power Dissipation:
1.25 kW
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
1.3 V
Part # Aliases:
935345546178
Unit Weight:
0.467870 oz
Tags
MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Broadband RF Power LDMOS Transistor, 470-860 MHz, 600 W, 50 V
***ark
140 W Avg. Over 470-870 Mhz, 50 V Rf Power Ldmos Transistor
***et
RF Power LDMOS MOSFET N-Cannel 115V 4-Pin NI-1230S-S T/R
***i-Key
BROADBAND RF POWER LDMOS TRANSIS
Part # Mfg. Description Stock Price
MRFE8VP8600HSR5
DISTI # MRFE8VP8600HSR5-ND
NXP SemiconductorsBROADBAND RF POWER LDMOS TRANSIS
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 50:$136.5290
MRFE8VP8600HSR5
DISTI # MRFE8VP8600HSR5
Avnet, Inc.RF Power LDMOS MOSFET N-Cannel 115V 4-Pin NI-1230S-S T/R - Tape and Reel (Alt: MRFE8VP8600HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel
Americas - 0
  • 500:$125.7900
  • 300:$128.2900
  • 200:$133.0900
  • 100:$138.4900
  • 50:$144.1900
MRFE8VP8600HSR5
DISTI # 771-MRFE8VP8600HSR5
NXP SemiconductorsRF MOSFET Transistors MRFE8VP8600HS/CFM4F///REEL 13
RoHS: Compliant
0
  • 1:$151.3700
  • 5:$148.4000
  • 10:$141.4800
  • 25:$138.5100
  • 50:$138.5100
MRFE8VP8600HSR5
DISTI # MRFE8VP8600HSR5
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$148.4000
Image Part # Description
MRFE8VP8600HR5

Mfr.#: MRFE8VP8600HR5

OMO.#: OMO-MRFE8VP8600HR5

RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
MRFE8VP8600HSR5

Mfr.#: MRFE8VP8600HSR5

OMO.#: OMO-MRFE8VP8600HSR5

RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
MRFE8VP8600HSR5

Mfr.#: MRFE8VP8600HSR5

OMO.#: OMO-MRFE8VP8600HSR5-NXP-SEMICONDUCTORS

BROADBAND RF POWER LDMOS TRANSIS
MRFE8VP8600HR5

Mfr.#: MRFE8VP8600HR5

OMO.#: OMO-MRFE8VP8600HR5-NXP-SEMICONDUCTORS

RF MOSFET Transistors Broadband RF Power LDMOS Transistor, 470-860 MHz, 600 W, 50 V
Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of MRFE8VP8600HSR5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$151.37
$151.37
5
$148.40
$742.00
10
$141.48
$1 414.80
25
$138.51
$3 462.75
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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