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IPZ60R099C7XKSA1

IPZ60R099C7XKSA1
Mfr. #:
IPZ60R099C7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPZ60R099C7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPZ60R099C7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-4
Vds - Drain-Source Breakdown Voltage:
600 V
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS C7
Width:
5.21 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Part # Aliases:
IPZ60R099C7 SP001298006
Unit Weight:
0.217422 oz
Tags
IPZ60R09, IPZ60R0, IPZ60, IPZ6, IPZ
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 600V, 22A, 110W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 110W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPZ60R099C7XKSA1
DISTI # 33150322		Infineon Technologies AGTrans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$3.0435
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 22A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		166In Stock
  • 25:$5.7408
  • 10:$6.0730
  • 1:$6.7600
IPZ60R099C7XKSA1
DISTI # V36:1790_06376970		Infineon Technologies AGTrans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$2.8310
  • 120000:$2.8350
  • 24000:$3.3350
  • 2400:$4.3200
  • 240:$4.4900
IPZ60R099C7XKSA1
DISTI # SP001298006		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001298006)
RoHS: Compliant
Min Qty: 1		Europe - 40
  • 500:€2.7900
  • 1000:€2.7900
  • 100:€2.8900
  • 50:€2.9900
  • 25:€3.0900
  • 10:€3.3900
  • 1:€4.2900
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7XKSA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPZ60R099C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.9900
  • 1440:$3.0900
  • 960:$3.1900
  • 480:$3.2900
  • 240:$3.4900
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7XKSA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPZ60R099C7XKSA1)
RoHS: Compliant
Min Qty: 113
Container: Bulk		Americas - 0
  • 565:$2.7900
  • 1130:$2.7900
  • 339:$2.8900
  • 226:$2.9900
  • 113:$3.0900
IPZ60R099C7XKSA1
DISTI # 84AC6850		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, 110W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes240
  • 500:$4.0700
  • 250:$4.5300
  • 100:$4.7800
  • 50:$5.0200
  • 25:$5.2700
  • 10:$5.5100
  • 1:$6.4900
IPZ60R099C7XKSA1
DISTI # 726-IPZ60R099C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW129
  • 1:$6.4300
  • 10:$5.4600
  • 100:$4.7300
  • 250:$4.4900
  • 500:$4.0300
IPZ60R099C7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		17520
  • 1000:$2.9200
  • 500:$3.0800
  • 100:$3.2000
  • 25:$3.3400
  • 1:$3.6000
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7XKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,22A,110W,PG-TO247-4136
  • 30:$4.7300
  • 10:$4.8100
  • 3:$5.1400
  • 1:$5.2900
IPZ60R099C7XKSA1
DISTI # IPZ60R099C7		Infineon Technologies AGN-Ch 600V 22A 110W 0,099R TO247-4
RoHS: Compliant		237
  • 1:€7.2900
  • 10:€4.2900
  • 50:€2.7900
  • 100:€2.6700
IPZ60R099C7XKSA1
DISTI # 2983378		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, 110W, TO-247240
  • 500:£2.9600
  • 250:£3.2800
  • 100:£3.4600
  • 10:£4.0000
  • 1:£5.1900
IPZ60R099C7XKSA1
DISTI # 2983378		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, 110W, TO-247
RoHS: Compliant		240
  • 1000:$4.8700
  • 500:$5.0600
  • 250:$5.6300
  • 100:$5.9300
  • 10:$6.8500
  • 1:$8.9000
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Availability
Stock:
129
On Order:
2112
Enter Quantity:
Current price of IPZ60R099C7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.43
$6.43
10
$5.46
$54.60
100
$4.73
$473.00
250
$4.49
$1 122.50
500
$4.03
$2 015.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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