SCTW90N65G2V

SCTW90N65G2V
Mfr. #:
SCTW90N65G2V
Manufacturer:
STMicroelectronics
Description:
SILICON CARBIDE POWER MOSFET 650
Lifecycle:
New from this manufacturer.
Datasheet:
SCTW90N65G2V Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SCTW90N65G2V more Information SCTW90N65G2V Product Details
Product Attribute
Attribute Value
Tags
SCTW, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
Part # Mfg. Description Stock Price
SCTW90N65G2V
DISTI # V36:1790_17702706
STMicroelectronicsN-channel 650 V SiC MOSFET0
    SCTW90N65G2V
    DISTI # 497-18351-ND
    STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Container: Tube
    Temporarily Out of Stock
      SCTW90N65G2V
      DISTI # SCTW90N65G2V
      STMicroelectronicsN-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V)
      RoHS: Not Compliant
      Min Qty: 30
      Container: Tube
      Americas - 0
      • 300:$38.2900
      • 150:$39.0900
      • 90:$40.8900
      • 60:$42.7900
      • 30:$44.8900
      SCTW90N65G2V
      DISTI # 02AH6930
      STMicroelectronicsPTD WBG & POWER RF0
      • 1:$37.5000
      SCTW90N65G2V
      DISTI # 511-SCTW90N65G2V
      STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      RoHS: Compliant
      0
      • 1:$49.5000
      • 5:$48.3900
      • 10:$46.5000
      Image Part # Description
      SCTW90N65G2V

      Mfr.#: SCTW90N65G2V

      OMO.#: OMO-SCTW90N65G2V

      MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      SCTW90N65G2V

      Mfr.#: SCTW90N65G2V

      OMO.#: OMO-SCTW90N65G2V-STMICROELECTRONICS

      SILICON CARBIDE POWER MOSFET 650
      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of SCTW90N65G2V is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $56.25
      $56.25
      10
      $53.44
      $534.38
      100
      $50.62
      $5 062.50
      500
      $47.81
      $23 906.25
      1000
      $45.00
      $45 000.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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