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SCTW90N65G2V

SCTW90N65G2V
Mfr. #:
SCTW90N65G2V
Manufacturer:
STMicroelectronics
Description:
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
Lifecycle:
New from this manufacturer.
Datasheet:
SCTW90N65G2V Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SCTW90N65G2V more Information SCTW90N65G2V Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
HIP247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
25 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.9 V
Vgs - Gate-Source Voltage:
10 V to 22 V
Qg - Gate Charge:
157 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 200 C
Pd - Power Dissipation:
390 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
SCTW90N
Transistor Type:
1 N-Channel
Brand:
STMicroelectronics
Fall Time:
16 ns
Product Type:
MOSFET
Rise Time:
38 ns
Factory Pack Quantity:
600
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
58 ns
Typical Turn-On Delay Time:
26 ns
Tags
SCTW, SCT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***va Crawler
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***ow.cn
Trans MOSFET N-CH SiC 650V 119A Automotive 3-Pin(3+Tab) HIP-247 Tube
***ure Electronics
N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247
***nell
MOSFET, N-CH, 650V, 119A, 200DEG C, 565W;
***et
N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET
***icroelectronics SCT
SiC MOSFETs, 650V ,119A, 24mΩ, HIP247
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
Part # Mfg. Description Stock Price
SCTW90N65G2V
DISTI # V36:1790_17702706		STMicroelectronicsN-channel 650 V SiC MOSFET0
    SCTW90N65G2V
    DISTI # 497-18351-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Container: Tube    		Temporarily Out of Stock
      SCTW90N65G2V
      DISTI # SCTW90N65G2V      		STMicroelectronicsN-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V)
      RoHS: Not Compliant
      Min Qty: 30
      Container: Tube      		Americas - 0
      • 300:$38.2900
      • 150:$39.0900
      • 90:$40.8900
      • 60:$42.7900
      • 30:$44.8900
      SCTW90N65G2V
      DISTI # 02AH6930      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$37.5000
      SCTW90N65G2V
      DISTI # 511-SCTW90N65G2V      		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      RoHS: Compliant      		0
      • 1:$49.5000
      • 5:$48.3900
      • 10:$46.5000
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      Availability
      Stock:
      Available
      On Order:
      5500
      Enter Quantity:
      Current price of SCTW90N65G2V is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $49.50
      $49.50
      5
      $48.39
      $241.95
      10
      $46.50
      $465.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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