IPT60R150G7XTMA1

Mfr. #:: IPT60R150G7XTMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPT60R150G7XTMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPT60R150G7XTMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: HSOF-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 17 A

Rds On - Drain-Source Resistance:: 129 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 23 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 106 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Series:: CoolMOS G7

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 6 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 56 ns

Typical Turn-On Delay Time:: 17 ns

Part # Aliases:: IPT60R150G7 SP001579346

Tags: IPT60R1, IPT60, IPT6, IPT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPT60R150G7XTMA1 Description

***nell: MOSFET, N-CH, 600V, 17A, 106W, HSOF

***ark: Mosfet, N-Ch, 600V, 17A, 106W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.129Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS

IPT60R150G7XTMA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ C7 Gold (G7) Power MOSFETs: Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.

Market price

Part #	Mfg.	Description	Stock	Price
IPT60R150G7XTMA1 DISTI # V36:1790_16563206	Infineon Technologies AG	HIGH POWER_NEW	0	2000000:$1.5110 1000000:$1.5130 200000:$1.6190 20000:$1.7850 2000:$1.8120
IPT60R150G7XTMA1 DISTI # V72:2272_16563206	Infineon Technologies AG	HIGH POWER_NEW	0
IPT60R150G7XTMA1 DISTI # IPT60R150G7XTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 17A HSOF-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1799In Stock	1000:$1.9641 500:$2.3289 100:$2.7357 10:$3.3390 1:$3.7200
IPT60R150G7XTMA1 DISTI # IPT60R150G7XTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 17A HSOF-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1799In Stock	1000:$1.9641 500:$2.3289 100:$2.7357 10:$3.3390 1:$3.7200
IPT60R150G7XTMA1 DISTI # IPT60R150G7XTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 17A HSOF-8 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$1.8115
IPT60R150G7XTMA1 DISTI # IPT60R150G7XTMA1	Infineon Technologies AG	Trans MOSFET N 650V 17A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT60R150G7XTMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	12000:$1.5900 20000:$1.5900 8000:$1.6900 2000:$1.7900 4000:$1.7900
IPT60R150G7XTMA1 DISTI # SP001579346	Infineon Technologies AG	Trans MOSFET N 650V 17A 8-Pin HSOF T/R (Alt: SP001579346) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Europe - 0	20000:€1.4900 8000:€1.5900 12000:€1.5900 4000:€1.7900 2000:€2.2900
IPT60R150G7XTMA1 DISTI # 84AC6844	Infineon Technologies AG	MOSFET, N-CH, 600V, 17A, 106W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.129ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	2385	1000:$1.8300 500:$2.1700 250:$2.4200 100:$2.5600 50:$2.6800 25:$2.8100 10:$2.9400 1:$3.4600
IPT60R150G7XTMA1 DISTI # 726-IPT60R150G7XTMA1	Infineon Technologies AG	MOSFET HIGH POWER NEW RoHS: Compliant	1816	1:$3.4300 10:$2.9100 100:$2.5300 250:$2.4000 500:$2.1500 1000:$1.8100 2000:$1.7200 4000:$1.6600
IPT60R150G7XTMA1 DISTI # 2983374	Infineon Technologies AG	MOSFET, N-CH, 600V, 17A, 106W, HSOF RoHS: Compliant	2385	1000:$2.6000 500:$2.8200 250:$3.1400 100:$3.3000 10:$3.8000 1:$5.0300
IPT60R150G7XTMA1 DISTI # 2983374	Infineon Technologies AG	MOSFET, N-CH, 600V, 17A, 106W, HSOF	2385	500:£1.5600 250:£1.7400 100:£1.8300 10:£2.1100 1:£2.7900

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of IPT60R150G7XTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.43~~; ~~$3.43~~

10: ~~$2.91~~; ~~$29.10~~

100: ~~$2.53~~; ~~$253.00~~

250: ~~$2.40~~; ~~$600.00~~

500: ~~$2.15~~; ~~$1 075.00~~

1000: ~~$1.81~~; ~~$1 810.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPT60R150G7XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes