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IPB80N06S4L07ATMA2

IPB80N06S4L07ATMA2
Mfr. #:
IPB80N06S4L07ATMA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 80A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB80N06S4L07ATMA2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N06S4L07ATMA2 DatasheetIPB80N06S4L07ATMA2 Datasheet (P4-P6)IPB80N06S4L07ATMA2 Datasheet (P7-P9)
ECAD Model:
More Information:
IPB80N06S4L07ATMA2 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
6.4 mOhms
Configuration:
Single
Qualification:
AEC-Q101
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
IPB80N06S4L
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
IPB80N06S4L-07 IPB8N6S4L7XT SP001028674
Unit Weight:
0.068654 oz
Tags
IPB80N06S4L0, IPB80N06S4L, IPB80N06S4, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 25, N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon IPB80N06S4L07ATMA2
***p One Stop Japan
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
***ronik
MOSFET 60V 6.4mOHM AECQ TO263
***i-Key
MOSFET N-CH 60V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB80N06S4L07ATMA2
DISTI # V36:1790_06384396		Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB80N06S4L07ATMA2
    DISTI # IPB80N06S4L07ATMA2-ND    		Infineon Technologies AGMOSFET N-CH 60V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$0.6505
    IPB80N06S4L07ATMA2
    DISTI # IPB80N06S4L07ATMA2    		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S4L07ATMA2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$0.5239
    • 6000:$0.5339
    • 4000:$0.5519
    • 2000:$0.5729
    • 1000:$0.5949
    IPB80N06S4L07ATMA2
    DISTI # 726-IPB80N06S4L07ATM    		Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2
    RoHS: Compliant    		230
    • 1:$1.3500
    • 10:$1.1500
    • 100:$0.8880
    • 500:$0.7850
    • 1000:$0.6200
    • 2000:$0.5500
    • 10000:$0.5290
    IPB80N06S4L-07
    DISTI # 726-IPB80N06S4L-07    		Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
    RoHS: Compliant    		0
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      Availability
      Stock:
      Available
      On Order:
      1984
      Enter Quantity:
      Current price of IPB80N06S4L07ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.43
      $1.43
      10
      $1.22
      $12.20
      100
      $0.94
      $94.10
      500
      $0.83
      $416.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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