BSF030NE2LQXUMA1

Mfr. #:: BSF030NE2LQXUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSF030NE2LQXUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: WDSON-2-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 25 V

Id - Continuous Drain Current:: 75 A

Rds On - Drain-Source Resistance:: 2.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 23 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 28 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Transistor Type:: 1 N-Channel

Width:: 5.05 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 55 S

Fall Time:: 2.6 ns

Moisture Sensitive:: Yes

Product Type:: MOSFET

Rise Time:: 3.4 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 18 ns

Typical Turn-On Delay Time:: 2.8 ns

Part # Aliases:: BSF030NE2LQ BSF3NE2LQXT SP000756348

Tags: BSF03, BSF0, BSF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BSF030NE2LQXUMA1 Description

***ure Electronics: Single N-Channel 25 V 3 mOhm 11.3 nC OptiMOS Power Mosfet - MG-WDSON-2

***ineon SCT: With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, MG-WDSON-2, RoHS

***nell: MOSFET, N-CH, 25V, 75A, WDSON-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Powe

***ineon: With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control

***ure Electronics: Single N-Channel 25 V 2.4 mOhm 23 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 25V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 48W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control

***ure Electronics: N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56

***r Electronics: Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***emi: N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ

***ark: MOSFET, N CH, 25V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; No. of Pins:8 ;RoHS Compliant: Yes

***rchild Semiconductor: • This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***ical: Trans MOSFET N-CH 25V 25A 8-Pin SOIC Tube

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters, SO8, RoHS

***ment14 APAC: MOSFET, N-CH, 25V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

***ure Electronics: Single N-Channel 25 V 1.8 mOhm 39 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N-CH, 25V, 40A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:25V; On Resistance

***ineon SCT: With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TSDSON-8, RoHS

***nell: MOSFET, N-CH, 25V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control

***ure Electronics: Single N-Channel 30 V 2.5 W 44 nC Silicon Surface Mount Mosfet - POWER 56-8

***emi: N-Channel PowerTrench® MOSFET 30V, 5.5mΩ

***nell: MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance

Market price

Part #	Mfg.	Description	Stock	Price
BSF030NE2LQXUMA1 DISTI # V72:2272_06384738	Infineon Technologies AG	Trans MOSFET N-CH 25V 24A 6-Pin WDSON T/R RoHS: Compliant	4990	3000:$0.3670 1000:$0.3708 500:$0.4538 250:$0.5049 100:$0.5106 25:$0.6299 10:$0.6375 1:$0.7268
BSF030NE2LQXUMA1 DISTI # BSF030NE2LQXUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 24A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4597In Stock	1000:$0.4781 500:$0.6056 100:$0.7808 10:$0.9880 1:$1.1200
BSF030NE2LQXUMA1 DISTI # BSF030NE2LQXUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 24A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4597In Stock	1000:$0.4781 500:$0.6056 100:$0.7808 10:$0.9880 1:$1.1200
BSF030NE2LQXUMA1 DISTI # BSF030NE2LQXUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 24A WDSON-2 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.4115
BSF030NE2LQXUMA1 DISTI # 29474506	Infineon Technologies AG	Trans MOSFET N-CH 25V 24A 6-Pin WDSON T/R RoHS: Compliant	4990	3000:$0.3670 1000:$0.3708 500:$0.4538 250:$0.5049 100:$0.5106 25:$0.6299 21:$0.6375
BSF030NE2LQXUMA1 DISTI # BSF030NE2LQXUMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 24A 6-Pin WDSON T/R - Tape and Reel (Alt: BSF030NE2LQXUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3239 10000:$0.3119 20000:$0.3009 30000:$0.2909 50000:$0.2849
BSF030NE2LQ DISTI # 726-BSF030NE2LQ	Infineon Technologies AG	MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS RoHS: Compliant	5075	1:$0.9300 10:$0.7880 100:$0.6050 500:$0.5350 1000:$0.4220 5000:$0.3750
BSF030NE2LQXUMA1 DISTI # 726-BSF030NE2LQXUMA1	Infineon Technologies AG	MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS RoHS: Compliant	2442	1:$0.9300 10:$0.7880 100:$0.6050 500:$0.5350 1000:$0.4220 5000:$0.3750
BSF030NE2LQXUMA1 DISTI # 8259073P	Infineon Technologies AG	MOSFET N-CH 24A 25V OPTIMOS WDSON6, RL	14940	100:£0.4680 400:£0.3970 1000:£0.3490
BSF030NE2LQXUMA1 DISTI # 2480773	Infineon Technologies AG	MOSFET, N-CH, 25V, 75A, WDSON-2 RoHS: Compliant	0	5:£0.6100 25:£0.5970 100:£0.4570 250:£0.3970 500:£0.3590
BSF030NE2LQXUMA1 DISTI # C1S322000675715	Infineon Technologies AG	MOSFETs RoHS: Compliant	4990	250:$0.5215 100:$0.5231 25:$0.6311 10:$0.6425
BSF030NE2LQXUMA1 DISTI # 2480773RL	Infineon Technologies AG	MOSFET, N-CH, 25V, 75A, WDSON-2 RoHS: Compliant	0	1:$1.4700 10:$1.2500 100:$0.9580 500:$0.8470 1000:$0.6680 5000:$0.5940
BSF030NE2LQXUMA1 DISTI # 2480773	Infineon Technologies AG	MOSFET, N-CH, 25V, 75A, WDSON-2 RoHS: Compliant	0	1:$1.4700 10:$1.2500 100:$0.9580 500:$0.8470 1000:$0.6680 5000:$0.5940

Image	Part #	Description
	Mfr.#: RFN3BM6SFHTL OMO.#: OMO-RFN3BM6SFHTL	Diodes - General Purpose, Power, Switching Fast Recvry 600V Vr TO-252(DPAK) 3A Io
	Mfr.#: SURHD8560W1T4G OMO.#: OMO-SURHD8560W1T4G	Rectifiers MEGAHERTZ 5 AMP 600V UL
	Mfr.#: FDP075N15A-F102 OMO.#: OMO-FDP075N15A-F102	MOSFET 150V NChan PwrTrench
	Mfr.#: RFN3BM6SFHTL OMO.#: OMO-RFN3BM6SFHTL-ROHM-SEMI	SUPER FAST RECOVERY DIODE (CORRE
	Mfr.#: FDP075N15A-F102 OMO.#: OMO-FDP075N15A-F102-ON-SEMICONDUCTOR	MOSFET N-CH 150V 130A TO-220-3
	Mfr.#: SURHD8560W1T4G OMO.#: OMO-SURHD8560W1T4G-111	Rectifiers MEGAHERTZ 5 AMP 600V UL

BSF030NE2LQXUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes