IRFS3307ZTRLPBF

Mfr. #:: IRFS3307ZTRLPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRFS3307ZTRLPBF Datasheet
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Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 75 V

Id - Continuous Drain Current:: 128 A

Rds On - Drain-Source Resistance:: 5.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Qg - Gate Charge:: 110 nC

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 230 W

Configuration:: Single

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 320 S

Fall Time:: 65 ns

Product Type:: MOSFET

Rise Time:: 64 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Part # Aliases:: SP001565042

Unit Weight:: 0.139332 oz

Tags: IRFS3307Z, IRFS3307, IRFS330, IRFS33, IRFS3, IRFS, IRF

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

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IRFS3307ZTRLPBF Description

***ure Electronics: Single N-Channel 75V 5.8 mOhm 79 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***Yang: Trans MOSFET N-CH 75V 120A 3-Pin D2PAK T/R - Tape and Reel

***(Formerly Allied Electronics): MOSFET, 75V, 120A, 5.8 MOHM, 79 NC QG, D2-PAK | Infineon IRFS3307ZTRLPBF

***ark: N CH POWER MOSFET, HEXFET, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes

***nsix Microsemi: Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 75V, 120A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 230W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ark: Mosfet Transistor, N Channel, 135 A, 55 V, 4.7 Mohm, 10 V, 4 V

***(Formerly Allied Electronics): IRF2805SPBF N-channel MOSFET Module, 135 A, 55 V, 3-Pin D2PAK | Infineon IRF2805SPBF

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 55 V 4.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK

***Yang: Trans MOSFET N-CH 55V 135A 3-Pin(2+Tab) D2PAK - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***trelec: Power FET Operating temperature: -55...+175 °C Housing type: DPAK Polarity: N Variants: Enhancement mode Power dissipation: 200 W

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, 55V, 135A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 135A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

***ure Electronics: Single N-Channel 55V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A⑥) | MOSFET N-CH 55V 131A D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK Tube

***eco: IRF1405STRLPBF,MOSFET, 55V, 13 1A, 5.3 MOHM, 170 NC QG, D2-P

***ark: Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:200W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF1405STRLPBF.

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***icroelectronics: N-CHANNEL 75V - 0.0065OHM -120A D2PAK STripFET II MOSFET

***roFlash: Mosfet Transistor, N Channel, 70 A, 75 V, 6.5 Mohm, 10 V, 4 V

***ical: Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 75 V 0.0075 O 160 nC Surface Mount STripFETII MosFet - D2PAK

***ark: MOSFET, N CH, 75V, 120A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

***nell: MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 75V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***icroelectronics: N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET

***ical: Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 120A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 55V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

***(Formerly Allied Electronics): Transistor MOSFET N-ch 75V 90A D2PAK

***Yang: Trans MOSFET N-CH 75V 128A 3-Pin(2+Tab) D2PAK Tube - Rail/Tube

***SIT Distribution GmbH: Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***ineon: Summary of Features: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***ineon SCT: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***(Formerly Allied Electronics): AUIRFS3306 N-channel MOSFET Transistor, 120 A, 160 A, 60 V, 3-Pin D2PAK | Infineon AUIRFS3306

***SIT Distribution GmbH: Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

***et: Trans MOSFET N-CH 75V 106A 3-Pin(2+Tab) D2PAK Tube

***ark: TUBE // Automotive MOSFET 75V, 75A, 7 mOhm,150nC Qg, D2Pak

***SIT Distribution GmbH: Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 75V, 106A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

***et: Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263

*** Electronics: MOSFET, N CH, 60V, 90A, TO263

***nell: MOSFET, N CH, 60V, 90A, TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:272W; Voltage Vgs Max:20V

***emi: Power MOSFET, P-Channel, -60V, -100A, 5.8mΩ

***ure Electronics: P-Channel 60 V 100 A 5.8 mOhm Surface Mount Power Mosfet - TO-263

***ark: MOSFET, P-CH, -60V, -100A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2.6V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, P-CH, -60V, -100A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.6V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ure Electronics: SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3

***ical: Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) TO-263

***ment14 APAC: MOSFET,N CH,W DIODE,55V,110A,TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:157W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V

Market price

Part #	Mfg.	Description	Stock	Price
IRFS3307ZTRLPBF DISTI # V72:2272_13891546	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R	800	500:$1.3004 250:$1.4638 100:$1.4798 25:$1.7737 10:$1.7946 1:$2.0464
IRFS3307ZTRLPBF DISTI # IRFS3307ZTRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2881In Stock	100:$2.1957 10:$2.7320 1:$3.0300
IRFS3307ZTRLPBF DISTI # IRFS3307ZTRLPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2881In Stock	100:$2.1957 10:$2.7320 1:$3.0300
IRFS3307ZTRLPBF DISTI # IRFS3307ZTRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	2400In Stock	800:$1.4969
IRFS3307ZTRLPBF DISTI # 31043949	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R	53600	800:$1.6595
IRFS3307ZTRLPBF DISTI # 31230377	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R	800	500:$1.3004 250:$1.4638 100:$1.4798 25:$1.7737 10:$1.7946 7:$2.0464
IRFS3307ZTRLPBF DISTI # IRFS3307ZTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 75V 128A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS3307ZTRLPBF) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$0.9919 1600:$0.9559 3200:$0.9219 4800:$0.8909 8000:$0.8749
IRFS3307ZTRLPBF DISTI # 34AC1756	Infineon Technologies AG	MOSFET, N-CH, 75V, 120A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	380	1:$2.5400 10:$2.1600 25:$2.0200 50:$1.8700 100:$1.7300 250:$1.6200 500:$1.5100
IRFS3307ZTRLPBF DISTI # 70019743	Infineon Technologies AG	MOSFET,75V,120A,5.8 MOHM,79 NC QG,D2-PAK RoHS: Compliant	0	800:$3.5000
IRFS3307ZTRLPBF DISTI # 942-IRFS3307ZTRLPBF	Infineon Technologies AG	MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg RoHS: Compliant	5565	1:$2.5400 10:$2.1600 100:$1.7300 500:$1.5100 800:$1.2500
IRFS3307ZTRLPBF DISTI # 1300997P	Infineon Technologies AG	MOSFET HEXFET N-CH 75V 128A D2PAK, RL	1570	50:£1.5580 100:£1.2500 500:£0.9720 1000:£0.8600
IRFS3307ZTRLPBF DISTI # 2781138	Infineon Technologies AG	MOSFET, N-CH, 75V, 120A, TO-263AB RoHS: Compliant	380	1:$2.4300 10:$2.2700 100:$2.0100 250:$1.9000 500:$1.8000 1000:$1.7100
IRFS3307ZTRLPBF DISTI # C1S322000495003	Infineon Technologies AG	MOSFETs	53600	2400:$0.9830 1600:$1.0600 800:$1.3800
IRFS3307ZTRLPBF DISTI # 2781138	Infineon Technologies AG	MOSFET, N-CH, 75V, 120A, TO-263AB RoHS: Compliant	380	1:£1.9600 10:£1.5600 100:£1.2500 250:£1.1000 500:£0.9430

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IRFS3307ZTRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes