PartNumber | IRFS3307ZTRLPBF | IRFS3307ZTRRPBF | IRFS3307ZPBF |
Description | MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | 75 V |
Id Continuous Drain Current | 128 A | 120 A | 120 A |
Rds On Drain Source Resistance | 5.8 mOhms | 5.8 mOhms | 4.6 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
Qg Gate Charge | 110 nC | 79 nC | 79 nC |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 230 W | 230 W | 230 W |
Configuration | Single | Single | Single |
Packaging | Reel | Reel | Tube |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 320 S | 320 S | 320 S |
Fall Time | 65 ns | 65 ns | 65 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 64 ns | 64 ns | 64 ns |
Factory Pack Quantity | 800 | 800 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SP001565042 | SP001568048 | SP001576230 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Channel Mode | - | - | Enhancement |
Type | - | - | HEXFET Power MOSFET |
Typical Turn Off Delay Time | - | - | 38 ns |
Typical Turn On Delay Time | - | - | 15 ns |