IRFS3307ZTRRPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

75 V

Id - Continuous Drain Current:

120 A

Rds On - Drain-Source Resistance:

5.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

79 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

230 W

Configuration:

Single

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

320 S

Fall Time:

65 ns

Product Type:

MOSFET

Rise Time:

64 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Part # Aliases:

SP001568048

Unit Weight:

0.139332 oz

Tags

IRFS3307Z, IRFS3307, IRFS330, IRFS33, IRFS3, IRFS, IRF