NTMD4884NFR2G

Mfr. #:: NTMD4884NFR2G
Manufacturer:: ON Semiconductor
Description:: MOSFET NFET FTKY S08 30V TR 5.6A
Lifecycle:: New from this manufacturer.
Datasheet:: NTMD4884NFR2G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NTMD4884NFR2G Datasheet NTMD4884NFR2G Datasheet (P4-P6)NTMD4884NFR2G Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOIC-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 5.7 A

Rds On - Drain-Source Resistance:: 48 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.3 W

Configuration:: Dual

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.5 mm

Length:: 5 mm

Transistor Type:: 2 N-Channel

Width:: 4 mm

Brand:: ON Semiconductor

Fall Time:: 1.4 ns

Product Type:: MOSFET

Rise Time:: 6.5 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 14 ns

Typical Turn-On Delay Time:: 6 ns

Unit Weight:: 0.006596 oz

Tags: NTMD48, NTMD4, NTMD, NTM

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Vacuum Packaging with PL

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NTMD4884NFR2G Description

***emi: Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel

***th Star Micro: NTMD4884NF: Small Signal MOSFET 30V 5.7A 70 mOhm Dual N-Channel SO-8 FETKY

***ark: N Channel Mosfet, 30V, 5.7A, Soic, Full Reel

***r Electronics: Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***(Formerly Allied Electronics): SI4532CDY-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.3 A; 6 A; 30V; 8-Pin SOIC

***et: Trans MOSFET N/P-CH 30V 4.9A/3.4A 8-Pin SOIC N T/R

***roFlash: Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ure Electronics: Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 5.8A 8-Pin SOIC T/R

***enic: 30V 5.8A 40m´Î@10V5A 2.3W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No

***ment14 APAC: MOSFET, NN-CH, 30V, 5.8A, SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):33mohm; Power Dissipation Pd:2.3W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V

***et Europe: Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8

*** Stop Electro: Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po

***ark: Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes

***Yang: Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel

***emi: Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ

***enic: 30V 5.5A 38m´Î@10V5.5A 2W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainsuperior switching performance.These devices are well suited for low voltage andbattery powered applications where low in-line powerloss and fast switching are required.

***emi: N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ

***ure Electronics: N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V

***Yang: Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 5.5A, 40mΩ

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.5A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, N, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 5.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 20A; SMD Marking: FDS6930A; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V

Market price

Part #	Mfg.	Description	Stock	Price
NTMD4884NFR2G DISTI # NTMD4884NFR2G-ND	ON Semiconductor	MOSFET N-CH 30V 3.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NTMD4884NFR2G	ON Semiconductor	RoHS: Not Compliant	43322	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
NTMD4884NFR2G DISTI # 863-NTMD4884NFR2G	ON Semiconductor	MOSFET NFET FTKY S08 30V TR 5.6A RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: NTMD4820NR2G OMO.#: OMO-NTMD4820NR2G	MOSFET NFET SO8 30V 8A TR 0.020R
	Mfr.#: NTMD4840NR2G OMO.#: OMO-NTMD4840NR2G	MOSFET NFET SO8 30V 7.5A 0.034R
	Mfr.#: NTMD4884NFR2G OMO.#: OMO-NTMD4884NFR2G	MOSFET NFET FTKY S08 30V TR 5.6A
	Mfr.#: NTMD4840NR2G OMO.#: OMO-NTMD4840NR2G-ON-SEMICONDUCTOR	MOSFET 2N-CH 30V 4.5A 8SOIC
	Mfr.#: NTMD4801NR2G OMO.#: OMO-NTMD4801NR2G-1190	New and Original
	Mfr.#: NTMD4820DR2G OMO.#: OMO-NTMD4820DR2G-1190	New and Original
	Mfr.#: NTMD4820NR2G OMO.#: OMO-NTMD4820NR2G-ON-SEMICONDUCTOR	MOSFET 2N-CH 30V 4.9A 8SOIC
	Mfr.#: NTMD4820NR2G , FM1A4M OMO.#: OMO-NTMD4820NR2G-FM1A4M-1190	New and Original
	Mfr.#: NTMD4840N OMO.#: OMO-NTMD4840N-1190	New and Original
	Mfr.#: NTMD4884NFR2G OMO.#: OMO-NTMD4884NFR2G-ON-SEMICONDUCTOR	IGBT Transistors MOSFET NFET FTKY S08 30V TR 5.6A

NTMD4884NFR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes