OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTMD4884NFR2G

P1-P3P4-P6P7-P7
NTMD4884NF
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
1251007550250-25-50
0.750
1.000
1.250
1.500
302520151050
10
100
1000
10,000
Figure 7. Capacitance Variation Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
DRAIN-TO-SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
2520151050
0
50
100
150
250
300
350
6543210
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
100101
0.1
10
100
1.00.80.60.40.20
0
0.5
1.0
1.5
2.0
2.5
3.0
R
DS(on)
, DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
C, CAPACITANCE (pF)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
150
0.875
1.125
1.375
ID = 4 A
V
GS
= 10 V
T
J
= 125°C
V
GS
= 0 V
T
J
= 150°C
200
T
J
= 25°C
C
iss
C
oss
C
rss
T
J
= 25°C
ID = 4 A
Q2Q1
V
GS
QT
V
DD
= 15 V
ID = 1.0 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
V
GS
= 0 V
T
J
= 25°C
V
GS
= 0 V
1
NTMD4884NF
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 11. Thermal Response - R
q
JA
at Steady State (min pad)
PULSE TIME (sec)
1000100101
0.01
0.1
1
10
1000
Figure 12. Thermal Response - R
q
JA
at Steady State (1 inch sq pad)
Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.31.10.90.70.50.30.1
0.1
1
10
100
R(t) (°C/W)I
F
, INSTANTANEOUS FORWARD CURRENT (A)
0.10.010.0010.00010.000010.0000010.0000001
Single Pulse
0.01
0.02
0.05
0.1
0.2
0.5
PULSE TIME (sec)
1000100101
0.001
0.01
0.1
1
10
100
R(t) (°C/W)
0.10.010.0010.00010.000010.0000010.0000001
Single Pulse
0.01
0.02
0.05
0.1
0.2
0.5
T
J
= 25°C
T
J
= 125°C
T
J
= -55°C
T
J
= 85°C
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
1.31.10.90.70.50.30.1
0.1
1
10
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
T
J
= 25°C
T
J
= 125°C
T
J
= 85°C
100
NTMD4884NF
http://onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 15. Typical Reverse Current Figure 16. Maximum Reverse Current
V
R
, REVERSE VOLTAGE (V)
30100
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
Figure 17. Capacitance
V
R
, REVERSE VOLTAGE (V)
3520151050
10
100
1000
I
R
, REVERSE CURRENT (A)
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
30100
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
I
R
, MAXIMUM REVERSE CURRENT (A)
T
J
= 25°C
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
25 30
2020
P1-P3P4-P6P7-P7

NTMD4884NFR2G

Mfr. #:
Buy NTMD4884NFR2G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET FTKY S08 30V TR 5.6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet