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NTMD4884NFR2G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1 Publication Order Number:
NTMD4884NF/D
NTMD4884NF
Power MOSFET and
Schottky Diode
30 V, 5.7 A, Single N-Channel with 30 V,
2.8 A, Schottky Barrier Diode
Features
•FETKYt Surface Mount Package Saves Board Space
•Independent Pin-Out for MOSFET and Schottky Allowing for
Design Flexibility
•Low R
DS(on)
MOSFET and Low V
F
Schottky to Minimize
Conduction Losses
•Optimized Gate Charge to Minimize Switching Losses
•This is a Pb-Free Device
Applications
•Disk Drives
•DC-DC Converters
•Printers
MOSFET MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Rating Symbol Value Unit
Drain-to-Source Voltage V
DSS
30 V
Gate-to-Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
4.7
A
T
A
= 70°C 3.8
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
1.6 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
3.3
A
T
A
= 70°C 2.6
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.77 W
Continuous Drain
Current R
q
JA
t < 10 s
(Note 1)
T
A
= 25°C
I
D
5.7
A
T
A
= 70°C 4.5
Power Dissipation
R
q
JA
t < 10 s (Note 1)
T
A
= 25°C P
D
2.3 W
Pulsed Drain Current T
A
= 25°C,
t
p
= 10 ms
I
DM
19 A
Operating Junction and Storage Temperature T
J
, T
STG
-55 to
+150
°C
Source Current (Body Diode) I
S
1.3 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
SCHOTTKY MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Peak Repetitive Reverse Voltage V
RRM
30 V
DC Blocking Voltage V
R
30 V
Average Rectified Forward
Current, (Note 1)
Steady
State
I
F
2.8
A
t < 10 s 4.1
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NTMD4884NFR2G SOIC-8
(Pb-Free)
2500/Tape & Reel
SOIC-8
CASE 751
STYLE 18
4884NF = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
4884NF
AYWW
G
1
8
MARKING DIAGRAM
& PIN ASSIGNMENT
AASG
C CDD
G
D
N-Channel MOSFET
S
C
A
Schottky Diode
30 V
30 V
70 mW @ 4.5 V
48 mW @ 10 V
2.8 A
R
DS(on)
Max
0.5 V
I
D
Max
V
(BR)DSS
N-CHANNEL MOSFET
SCHOTTKY DIODE
V
R
Max I
F
MaxV
F
Max
5.7 A
NTMD4884NF
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter MOSFET & Schottky Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1)
R
q
JA
79
°C/W
Junction-to-Ambient – t ≤10 s Steady State (Note 1)
R
q
JA
54
Junction-to-FOOT (Drain) Equivalent to R
q
JC
R
q
JF
50
Junction-to-Ambient – Steady State (Note 2)
R
q
JA
163
1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
24
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
1.0
mA
T
J
= 125°C
20
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.0 mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 4.0 A
34 48
mW
V
GS
= 4.5 V I
D
= 3.5 A
50 70
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 4.0 A 10 S
Gate Resistance R
G
2.4 3.6
W
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
280 360
pF
Output Capacitance C
OSS
60 80
Reverse Transfer Capacitance C
RSS
32 42
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 4.0 A
2.8 4.2
nC
Threshold Gate Charge Q
G(TH)
0.4
Gate-to-Source Charge Q
GS
1.2
Gate-to-Drain Charge Q
GD
1.0
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 4.0 A
5.6 8.0
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time t
d(ON)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 1.0 A, R
G
= 6.0 W
6.0 12
ns
Rise Time t
r
6.5 13
Turn-Off Delay Time t
d(OFF)
14 26
Fall Time t
f
1.4 7.0
DRAIN-TO-SOURCE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V
I
D
= 1.3 A
T
J
= 25°C
0.8 1.0
V
T
J
= 125°C
0.65
ns
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 4.0 A
9.2 20
Charge Time t
a
6.0
Discharge Time t
b
3.2
Reverse Recovery Time Q
RR
3.3
nC
NTMD4884NF
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3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic UnitMaxTypMinTest ConditionSymbol
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Instantaneous
Forward Voltage
V
F
I
F
= 0.1 A
T
J
= 25°C 0.26 0.28
V
T
J
= 125°C 0.11 0.13
I
F
= 2.0 A
T
J
= 25°C 0.4 0.50
T
J
= 125°C 0.35 0.46
Maximum Instantaneous
Reverse Current
I
R
V
R
= 10 V
T
J
= 25°C 0.020 0.25
mA
T
J
= 125°C 10 37
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
10 V
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V) V
GS
, GATE-TO-SOURCE VOLTAGE (V)
543210
0
3
6
9
12
15
543210
0
3
6
9
12
15
Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
108642
0.02
0.03
0.04
0.05
0.07
0.08
158765432
0.02
0.03
0.04
0.05
0.06
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
V
GS
= 4.0 V
T
J
= 25°C
4.2 V
3.8 V
3.6 V
3.4 V
3.2 V
4.5 V
5 V
3.0 V
2.8 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= 125°C
T
J
= -55°C
ID = 4 A
T
J
= 25°C
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
2.6 V
0.06
913121110 14
P1-P3P4-P6P7-P7

NTMD4884NFR2G

Mfr. #:
Buy NTMD4884NFR2G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET FTKY S08 30V TR 5.6A
Lifecycle:
New from this manufacturer.
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