IPB017N10N5LFATMA1

Mfr. #:: IPB017N10N5LFATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 100V D2PAK-7
Lifecycle:: New from this manufacturer.
Datasheet:: IPB017N10N5LFATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB017N10N5LFATMA1 more Information

Product Attribute
Attribute Value

Tags: IPB017, IPB01, IPB0, IPB

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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IPB017N10N5LFATMA1 Description

***i-Key: MOSFET N-CH 100V D2PAK-7

***ical: Trans MOSFET N-CH 100V 180A

***ronik: N-CH 100V 180A 1,5mOhm TO263-7

***et Europe: DIFFERENTIATED MOSFETS

***ark: Mosfet, N-Ch, 100V, 180A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 180A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 100V, 180A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:180A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0015ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

IPB017N10N5LFATMA1 More Information

Light Electric Vehicles (LEV): Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Market price

Part #	Mfg.	Description	Stock	Price
IPB017N10N5LFATMA1 DISTI # V72:2272_17076743	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0
IPB017N10N5LFATMA1 DISTI # V36:1790_17076743	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0	1000000:$3.3290 500000:$3.3320 100000:$3.5680 10000:$3.9820 1000:$4.0510
IPB017N10N5LFATMA1 DISTI # IPB017N10N5LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	362In Stock	500:$4.7911 100:$5.5020 10:$6.6460 1:$7.3600
IPB017N10N5LFATMA1 DISTI # IPB017N10N5LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	362In Stock	500:$4.7911 100:$5.5020 10:$6.6460 1:$7.3600
IPB017N10N5LFATMA1 DISTI # IPB017N10N5LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	2000:$3.9013 1000:$4.0514
IPB017N10N5LFATMA1 DISTI # SP001503850	Infineon Technologies AG	DIFFERENTIATED MOSFETS (Alt: SP001503850) RoHS: Compliant Min Qty: 1000	Europe - 1000	10000:€3.0900 6000:€3.2900 4000:€3.4900 2000:€3.6900 1000:€3.7900
IPB017N10N5LFATMA1 DISTI # IPB017N10N5LF	Infineon Technologies AG	DIFFERENTIATED MOSFETS (Alt: IPB017N10N5LF) RoHS: Compliant Min Qty: 2000	Asia - 10000	100000:$4.1422 50000:$4.2031 20000:$4.2658 10000:$4.3304 6000:$4.4658 4000:$4.6098 2000:$4.7635
IPB017N10N5LFATMA1 DISTI # IPB017N10N5LFATMA1	Infineon Technologies AG	DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB017N10N5LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$3.5900 10000:$3.5900 4000:$3.7900 2000:$3.8900 1000:$4.0900
IPB017N10N5LFATMA1 DISTI # 93AC7097	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes	0	500:$4.4700 250:$4.9100 100:$5.1300 50:$5.5200 25:$5.9200 10:$6.2000 1:$6.8600
IPB017N10N5LFATMA1 DISTI # 726-IPB017N10N5LFATM	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	2970	1:$6.7900 10:$6.1400 25:$5.8600 100:$5.0800 250:$4.8600 500:$4.4300 1000:$3.8500 2000:$3.7100
IPB017N10N5LFATMA1 DISTI # XSKDRABV0033034	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$4.9100 1000:$5.2600
IPB017N10N5LFATMA1 DISTI # 2986455	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, 313W, TO-263 RoHS: Compliant	0	100:$5.6100 50:$5.8700 25:$6.8000 10:$6.9300 5:$7.4700 1:$8.2800
IPB017N10N5LFATMA1 DISTI # 2986455	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, 313W, TO-263	3	500:£3.4500 250:£3.7700 100:£3.9600 10:£4.5600 1:£5.8000

Related products

Image	Part #	Description
	Mfr.#: IPB017N10N5LFATMA1 OMO.#: OMO-IPB017N10N5LFATMA1	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: IPB017N10N5ATMA1 OMO.#: OMO-IPB017N10N5ATMA1	MOSFET N-Ch 100V 180A D2PAK-2
	Mfr.#: IPB017N10N5LFATMA1 OMO.#: OMO-IPB017N10N5LFATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V D2PAK-7
	Mfr.#: IPB017N10N5ATMA1 OMO.#: OMO-IPB017N10N5ATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-2

Availability

Stock:: Available
On Order:: 2500
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Current price of IPB017N10N5LFATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB017N10N5LFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes