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S25FL128SAGNFV010

S25FL128SAGNFV010
Mfr. #:
S25FL128SAGNFV010
Manufacturer:
Cypress Semiconductor
Description:
Flash Memory 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, WSON6X8 IN TRAY PACKING
Lifecycle:
New from this manufacturer.
Datasheet:
S25FL128SAGNFV010 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
S25FL128SAGNFV010 more Information S25FL128SAGNFV010 Product Details
Product Attribute
Attribute Value
Manufacturer
Cypress Semiconductor Corp
Product Category
Memory
Series
FL-S
Packaging
Tray Alternate Packaging
Mounting-Style
SMD/SMT
Operating-Temperature-Range
- 40 C to + 105 C
Package-Case
WSON-8
Operating-Temperature
-40°C ~ 105°C (TA)
Interface
SPI Serial
Voltage-Supply
2.7 V ~ 3.6 V
Supplier-Device-Package
8-WSON (6x8)
Memory-Size
128M (16M x 8)
Memory-Type
FLASH - NOR
Speed
133MHz
Architecture
MirrorBit Eclipse
Format-Memory
FLASH
Standard
Common Flash Interface (CFI)
Interface-Type
SPI
Organization
16 M x 8
Supply-Current-Max
100 mA
Data-Bus-Width
8 bit
Supply-Voltage-Max
3.6 V
Supply-Voltage-Min
2.7 V
Maximum-Clock-Frequency
133 MHz
Timing-Type
Synchronous
Tags
S25FL128SAGNFV01, S25FL128SAGNFV, S25FL128SAGN, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, WSON-8, RoHS
***ark
TRAY PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, WSON6X8 IN TRAY PACKING
***ical
NOR Flash Serial-SPI 3V/3.3V 128M-bit 128M x 1 8ns 8-Pin WSON EP Tray
***i-Key
IC FLASH 128MBIT SPI/QUAD 8WSON
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
Part # Mfg. Description Stock Price
S25FL128SAGNFV010
DISTI # S25FL128SAGNFV010-ND		Cypress SemiconductorIC FLASH 128M SPI 133MHZ 8WSON
RoHS: Compliant
Min Qty: 338
Container: Tray		Temporarily Out of Stock
  • 338:$2.9269
S25FL128SAGNFV010Spansion 
RoHS: Not Compliant		270
  • 1000:$2.6300
  • 500:$2.7700
  • 100:$2.8800
  • 25:$3.0100
  • 1:$3.2400
S25FL128SAGNFV010
DISTI # 727-S25FL128SAGNF010		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		328
  • 1:$4.8700
  • 10:$4.3500
  • 25:$3.9200
  • 100:$3.5700
  • 250:$3.2200
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Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of S25FL128SAGNFV010 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.94
$3.94
10
$3.75
$37.48
100
$3.55
$355.05
500
$3.35
$1 676.65
1000
$3.16
$3 156.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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