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IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1
Mfr. #:
IPW65R080CFDAFKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 43.3A TO247-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R080CFDAFKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPW65R080CFDAFKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
43.3 A
Rds On - Drain-Source Resistance:
72 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
161 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
391 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
85 ns
Typical Turn-On Delay Time:
20 ns
Part # Aliases:
IPW65R080CFDA IPW65R8CFDAXK SP000875806
Unit Weight:
1.340411 oz
Tags
IPW65R080CFDA, IPW65R08, IPW65R0, IPW65R, IPW65, IPW6, IPW
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3
***p One Stop Japan
Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.072Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPW65R080CFDAFKSA1
DISTI # V99:2348_06378457		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAFKSA1
DISTI # IPW65R080CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 700V 43.3A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		1563In Stock
  • 240:$9.2271
  • 10:$11.2220
  • 1:$12.4700
IPW65R080CFDAFKSA1
DISTI # 31240601		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAXK
DISTI # IPW65R080CFDAFKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$6.4900
  • 480:$6.1900
  • 960:$5.9900
  • 1440:$5.7900
  • 2400:$5.6900
IPW65R080CFDAFKSA1
DISTI # 13AC9099		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:43.3A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1:$12.6400
  • 10:$11.5200
  • 25:$11.0400
  • 50:$10.3800
  • 100:$9.7300
IPW65R080CFDAFKSA1
DISTI # 726-IPW65R080CFDAFKS		Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant		1401
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDA
DISTI # 726-IPW65R080CFDA		Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant		158
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDAFKSA1
DISTI # 2726080		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant		140
  • 1:$19.8800
  • 10:$17.8900
  • 240:$14.7100
IPW65R080CFDAFKSA1
DISTI # 2726080		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant		161
  • 1:£6.2100
  • 5:£5.5200
  • 10:£5.2400
  • 50:£5.2200
  • 100:£5.1900
IPW65R080CFDAFKSA1
DISTI # C1S322000254716		Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
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Availability
Stock:
825
On Order:
2808
Enter Quantity:
Current price of IPW65R080CFDAFKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$10.78
$10.78
10
$9.74
$97.40
25
$9.29
$232.25
100
$8.07
$807.00
250
$7.70
$1 925.00
500
$7.02
$3 510.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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