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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BSO612CVGHUMA1 DISTI # 30701953 | Infineon Technologies AG | Trans MOSFET N/P-CH 60V 3A/2A Automotive 8-Pin DSO T/R RoHS: Compliant | 2500 |
|
| BSO612CVGHUMA1 DISTI # BSO612CVGHUMA1TR-ND | Infineon Technologies AG | MOSFET N/P-CH 60V 2A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSO612CVGHUMA1 DISTI # V36:1790_06384653 | Infineon Technologies AG | Trans MOSFET N/P-CH 60V 3A/2A Automotive 8-Pin DSO T/R RoHS: Compliant | 0 |
|
| BSO 612 CV G DISTI # BSO612CVG | Infineon Technologies AG | Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO - Bulk (Alt: BSO612CVG) RoHS: Not Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| BSO612CVGHUMA1 DISTI # BSO612CVGHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH/P-CH 60V 3A/2A 8-Pin DSO T/R - Bulk (Alt: BSO612CVGHUMA1) RoHS: Compliant Min Qty: 1087 Container: Bulk | Americas - 0 |
|
| BSO612CVGHUMA1 DISTI # BSO612CVGHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH/P-CH 60V 3A/2A 8-Pin DSO T/R - Tape and Reel (Alt: BSO612CVGHUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| BSO612CVGHUMA1 DISTI # SP000216307 | Infineon Technologies AG | Trans MOSFET N-CH/P-CH 60V 3A/2A 8-Pin DSO T/R (Alt: SP000216307) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| BSO612CV G DISTI # 726-BSO612CVG | Infineon Technologies AG | MOSFET N and P-Ch 60V 3A, -2A DSO-8 RoHS: Compliant | 1138 |
|
| BSO612CVG | Infineon Technologies AG | Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 9559 |
|
| BSO612CVGHUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2013 |
|
| BSO612CVGHUMA1 DISTI # 8269207P | Infineon Technologies AG | MOSFET N/P-CH 3A/2A 60V SIPMOS DSO8, RL | 1575 |
|
| BSO612CVGHUMA1 DISTI # BSO612CVGHUMA1 | Infineon Technologies AG | Transistor: N/P-MOSFET,unipolar,60/-60V,3/-2A,2W,PG-DSO-8 | 1934 |
|
| BSO612CVG | Infineon Technologies AG | 60/-60V,3/-2A,N/P channel Power MOSFET | 38 |
|
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