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SI4963BDY-T1-E3

SI4963BDY-T1-E3
Mfr. #:
SI4963BDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 6.2A 2W
Lifecycle:
New from this manufacturer.
Datasheet:
SI4963BDY-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4963BDY-T1-E3 DatasheetSI4963BDY-T1-E3 Datasheet (P4-P6)SI4963BDY-T1-E3 Datasheet (P7-P8)
ECAD Model:
More Information:
SI4963BDY-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI4
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Part # Aliases:
SI4963BDY-E3
Unit Weight:
0.006596 oz
Tags
SI4963, SI496, SI49, SI4
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual P-CH 20V 4.9A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
SI4963BDY-T1-E3 P-channel MOSFET Module; 4.9 A; 20 V; 8-Pin SOIC
***ure Electronics
Dual P-Channel 20 V 32 mOhms Surface Mount Power Mosfet - SOIC-8
***nell
MOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
***Yang
Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin Micro8 T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual N-Channel MOSFET
***ure Electronics
Dual N-Channel 20 V 0.03 Ohm 26 nC HEXFET® Power Mosfet - MICRO-8
***ineon SCT
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:5.4A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.3W; Drain Source On Resistance @ 2.7V:45mohm ;RoHS Compliant: Yes
***nell
MOSFET, DUAL N-CH , 20V, 5.4A, USOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 1.3W; Transistor Case Style: µSOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.4 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 12 / Fall Time ns = 16 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 8.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
***(Formerly Allied Electronics)
IRF7317PBF Dual N/P-channel MOSFET Transistor, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC | Infineon IRF7317PBF
***ure Electronics
Dual N/P-Channel 20 V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700
***ark
Dual N/P Channel Mosfet, 20V, Soic; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:6.6A; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7317PBF
***et
Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin TDSON T/R
***i-Key
MOSFET 2N-CH 20V 5.4A 8DSO
***i-Key Marketplace
SMALL SIGNAL N-CHANNEL MOSFET
***ure Electronics
Single P-Channel 20 V 0.04 Ohms Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R / MOSFET P-CH 20V 4.5A 8-SOIC
***enic
20V 4.5A 1.3W 40m´Î@4.5V6.2A 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:2.5W
*** Source Electronics
Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R / MOSFET P-CH 20V 4.5A 8-SOIC
***ure Electronics
Si9433BDY Series 20 V 6.2 A 0.040 Ohm Surface Mount P-Channel MOSFET - SO-8
***ment14 APAC
MOSFET, P CH, 20V, 4.5A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.5A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
***icroelectronics
N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package
***ure Electronics
N Channel 20 V 40 mOhm SMT StripFET II Power MOSFET - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R / MOSFET N-CH 20V 6A 8SOIC
***ark
MOSFET, N, SO-8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.7V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:2.5W RoHS Compliant: Yes
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Fall Time tf: 10ns; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 40mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 24A; Rise Time: 33ns; Voltage Vds Typ: 20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: 2.7V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI4963BDY-T1-E3
DISTI # V36:1790_09216505		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		17500
  • 5000:$0.4965
  • 2500:$0.5264
SI4963BDY-T1-E3
DISTI # V72:2272_09216505		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		2197
  • 1000:$0.5762
  • 500:$0.7336
  • 250:$0.8512
  • 100:$0.8861
  • 25:$1.0192
  • 10:$1.1324
  • 1:$1.3899
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3CT-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		14153In Stock
  • 1000:$0.5822
  • 500:$0.7375
  • 100:$0.8928
  • 10:$1.1450
  • 1:$1.2800
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		14153In Stock
  • 1000:$0.5822
  • 500:$0.7375
  • 100:$0.8928
  • 10:$1.1450
  • 1:$1.2800
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3TR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 12500:$0.4824
  • 5000:$0.5012
  • 2500:$0.5276
SI4963BDY-T1-E3
DISTI # 30882871		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		17500
  • 2500:$0.5264
SI4963BDY-T1-E3
DISTI # 33632322		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.4668
SI4963BDY-T1-E3
DISTI # 33962571		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		2197
  • 15:$1.3899
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4963BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5627
  • 15000:$0.5783
  • 10000:$0.5947
  • 5000:$0.6199
  • 2500:$0.6389
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R (Alt: SI4963BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.4729
  • 15000:€0.4939
  • 10000:€0.5589
  • 5000:€0.6889
  • 2500:€0.9609
SI4963BDY-T1-E3
DISTI # 69W7205		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 69W7205)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
    SI4963BDY-T1-E3.
    DISTI # 30AC0174    		Vishay IntertechnologiesDUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:6.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:12V,No. of Pins:8Pins RoHS Compliant: No0
    • 10000:$0.6880
    • 6000:$0.7150
    • 4000:$0.7430
    • 2000:$0.8250
    • 1000:$0.8690
    • 1:$0.9240
    SI4963BDY-T1-E3
    DISTI # 70026239    		Vishay SiliconixSI4963BDY-T1-E3 P-channel MOSFET Module,4.9 A,20 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 2500:$0.9370
    • 5000:$0.8820
    • 7500:$0.8260
    SI4963BDY-T1-E3
    DISTI # 781-SI4963BDY-E3    		Vishay IntertechnologiesMOSFET 20V 6.2A 2W
    RoHS: Compliant    		7295
    • 1:$1.5300
    • 10:$1.2600
    • 100:$0.9700
    • 500:$0.8340
    SI4963BDY-T1-E3Vishay Siliconix 2500
    • 5:$1.0500
    • 21:$0.6825
    • 75:$0.3938
    • 255:$0.3360
    • 552:$0.2940
    • 1311:$0.2730
    SI4963BDY-T1-E3Vishay Siliconix 2000
    • 477:$0.3640
    • 87:$0.4200
    • 1:$1.4000
    SI4963BDYT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 4.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		1635
      SI4963BDY-T1-E3
      DISTI # 2335325      		Vishay IntertechnologiesMOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC
      RoHS: Compliant      		4509
      • 500:$1.1200
      • 100:$1.3500
      • 10:$1.7300
      • 1:$1.9300
      SI4963BDY-T1-E3
      DISTI # 2335325      		Vishay IntertechnologiesMOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC4740
      • 500:£0.6150
      • 250:£0.6850
      • 100:£0.7550
      • 10:£1.0300
      • 1:£1.3000
      SI4963BDY-T1-E3Vishay IntertechnologiesMOSFET 20V 6.2A 2WAmericas -
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        OMO.#: OMO-NTCS0805E3103FHT-VISHAY

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        Availability
        Stock:
        Available
        On Order:
        1990
        Enter Quantity:
        Current price of SI4963BDY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.53
        $1.53
        10
        $1.26
        $12.60
        100
        $0.97
        $97.00
        500
        $0.83
        $417.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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