BSM10GD120DN2

Mfr. #:: BSM10GD120DN2
Manufacturer:: Infineon Technologies
Description:: IGBT Modules 1200V 10A FL BRIDGE
Lifecycle:: New from this manufacturer.
Datasheet:: BSM10GD120DN2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Modules

RoHS:: N

Product:: IGBT Silicon Modules

Configuration:: Hex

Collector- Emitter Voltage VCEO Max:: 1200 V

Collector-Emitter Saturation Voltage:: 2.7 V

Continuous Collector Current at 25 C:: 15 A

Gate-Emitter Leakage Current:: 120 nA

Pd - Power Dissipation:: 80 W

Package / Case:: EconoPACK 2

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tray

Height:: 17 mm

Length:: 107.5 mm

Width:: 45.5 mm

Brand:: Infineon Technologies

Mounting Style:: Chassis Mount

Maximum Gate Emitter Voltage:: 20 V

Product Type:: IGBT Modules

Factory Pack Quantity:: 10

Subcategory:: IGBTs

Part # Aliases:: BSM10GD120DN2BOSA1 SP000100367

Unit Weight:: 6.349313 oz

Tags: BSM10GD12, BSM10GD1, BSM10GD, BSM10G, BSM10, BSM1, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM10GD120DN2 Ratings and Reviews

T***j

2019-01-29

K***i

Very good qality, fast shipping, weak track and finally unexpeced delivery :)Thank you!

2019-05-29

N***v

Got it. Too long shipping!

2019-03-06

Z***d

Great Product, Recommended to purchase.

2019-03-15

BSM10GD120DN2 Description

***ser: IGBT - Standard Modules 1200V,10A,FL BRIDGE

***omponent: IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate

***nell: IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge + NTC Thermistor; Voltage, Vces:1200V; Current, Ic continuous a max:15A; Voltage, Vce sat max:3.2V; Power dissipation:80W; Case style:Econopack 3; Current, Icm pulsed:30A; Power, Pd:80W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.7V; Voltage, Vceo:1200V

Market price

Part #	Mfg.	Description	Stock	Price
BSM10GD120DN2BOSA1 DISTI # BSM10GD120DN2BOSA1-ND	Infineon Technologies AG	IGBT 2 LOW POWER ECONO2-1 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$56.9100
BSM10GD120DN2E3224BOSA1 DISTI # BSM10GD120DN2E3224BOSA1-ND	Infineon Technologies AG	IGBT 2 LOW POWER ECONO2-1 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$56.9100
BSM10GD120DN2BOSA1 DISTI # BSM10GD120DN2BOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 10A nom - Trays (Alt: BSM10GD120DN2BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$50.2900 20:$48.4900 40:$46.7900 60:$45.1900 100:$44.3900
BSM10GD120DN2E3224BOSA1 DISTI # BSM10GD120DN2E3224BOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 10A nom T/R - Trays (Alt: BSM10GD120DN2E3224BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$50.2900 20:$48.4900 40:$46.7900 60:$45.1900 100:$44.3900
BSM10GD120DN2 DISTI # 61M5051	Infineon Technologies AG	IGBT MODULE, 1.2KV, 15A, ECONOPACK2,Transistor Polarity:N Channel,DC Collector Current:15A,Collector Emitter Saturation Voltage Vce(on):2.7V,Power Dissipation Pd:80W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:17Pins RoHS Compliant: Yes	8	25:$52.4500 10:$54.2000 5:$56.4000 1:$57.7000
BSM10GD120DN2 DISTI # 641-BSM10GD120DN2	Infineon Technologies AG	IGBT Modules 1200V 10A FL BRIDGE RoHS: Not compliant	0
BSM10GD120DN2E3224 DISTI # 641-BSM10GD120DN2E32	Infineon Technologies AG	IGBT Modules N-CH 1.2KV 15A RoHS: Compliant	0
BSM10GD120DN2	Siemens	RoHS: Not Compliant	Europe - 93
BSM10GD120DN2 DISTI # 1496947	Infineon Technologies AG	IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant	21	50:£41.6300 10:£42.5800 5:£43.5200 1:£44.5200
BSM10GD120DN2 DISTI # 1496947	Infineon Technologies AG	IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant	16	5:$89.5900 1:$91.3000
BSM10GD120DN2 DISTI # C1S322000125876	Infineon Technologies AG	IGBT Chip RoHS: Not Compliant	8	5:$74.6000 1:$87.3000

Related products

Image	Part #	Description
	Mfr.#: BSM10GD120DN2E3224 OMO.#: OMO-BSM10GD120DN2E3224	IGBT Modules N-CH 1.2KV 15A
	Mfr.#: BSM10GD100DN1 OMO.#: OMO-BSM10GD100DN1-1190	New and Original
	Mfr.#: BSM10GD120DN2E OMO.#: OMO-BSM10GD120DN2E-1190	New and Original
	Mfr.#: BSM10GD120DN2_E3224 OMO.#: OMO-BSM10GD120DN2-E3224-1190	New and Original
	Mfr.#: BSM10GD60DL OMO.#: OMO-BSM10GD60DL-1190	New and Original
	Mfr.#: BSM10GD60DLC OMO.#: OMO-BSM10GD60DLC-1190	New and Original
	Mfr.#: BSM10GP06 OMO.#: OMO-BSM10GP06-1190	New and Original
	Mfr.#: BSM10GD120DN2BOSA1 OMO.#: OMO-BSM10GD120DN2BOSA1-INFINEON-TECHNOLOGIES	IGBT 2 LOW POWER ECONO2-1
	Mfr.#: BSM10GP120BOSA1 OMO.#: OMO-BSM10GP120BOSA1-INFINEON-TECHNOLOGIES	IGBT 2 LOW POWER ECONO2-5
	Mfr.#: BSM10GP60 OMO.#: OMO-BSM10GP60-125	IGBT Modules 600V 10A PIM

Availability

Stock:: Available
On Order:: 2000
Enter Quantity:

Current price of BSM10GD120DN2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$57.69~~; ~~$57.69~~

5: ~~$56.40~~; ~~$282.00~~

10: ~~$54.19~~; ~~$541.90~~

25: ~~$52.45~~; ~~$1 311.25~~

100: ~~$48.60~~; ~~$4 860.00~~

250: ~~$47.21~~; ~~$11 802.50~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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