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BSZ180P03NS3GATMA1

BSZ180P03NS3GATMA1
Mfr. #:
BSZ180P03NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ180P03NS3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
39.6 A
Rds On - Drain-Source Resistance:
13.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.1 V
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
30 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
40 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
BSZ180P03
Transistor Type:
1 P-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
18 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
BSZ180P03NS3 BSZ18P3NS3GXT G SP000709744
Tags
BSZ180P03NS3G, BSZ18, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R
***ical
Trans MOSFET P-CH 30V 9A 8-Pin TSDSON EP T/R
***et Europe
Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP
***i-Key
MOSFET P-CH 30V 39.6A TSDSON-8
***ark
MOSFET, P-CH, -30V, -39.6A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-39.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, P-CH, -30V, -39.6A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-39.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:40W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS P3 Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, CANALE P, -30V, -39.6A, 150°C; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-39.6A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0135ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2.5V; Dissipazione di Potenza Pd:40W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS P3 Series; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Normal level, logic level or super logic level; Avalanche rated; Pb-free lead plating; RoHS compliant | Target Applications: Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Part # Mfg. Description Stock Price
BSZ180P03NS3GATMA1
DISTI # 32735896		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R
RoHS: Compliant		25000
  • 5000:$0.2222
BSZ180P03NS3GATMA1
DISTI # 32825714		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.1838
BSZ180P03NS3GATMA1
DISTI # BSZ180P03NS3GATMA1TR-ND		Infineon Technologies AGMOSFET P-CH 30V 39.6A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.2445
BSZ180P03NS3GATMA1
DISTI # V36:1790_06390925		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
  • 5000000:$0.2091
  • 2500000:$0.2093
  • 500000:$0.2216
  • 50000:$0.2413
  • 5000:$0.2445
BSZ180P03NS3GATMA1
DISTI # BSZ180P03NS3GATMA1		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ180P03NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.1749
  • 30000:$0.1779
  • 20000:$0.1839
  • 10000:$0.1909
  • 5000:$0.1979
BSZ180P03NS3GATMA1
DISTI # SP000709744		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP (Alt: SP000709744)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 50000:€0.1739
  • 30000:€0.1879
  • 20000:€0.2039
  • 10000:€0.2219
  • 5000:€0.2719
BSZ180P03NS3GATMA1
DISTI # 726-BSZ180P03NS3GATM		Infineon Technologies AGMOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
RoHS: Compliant		4800
  • 1:$0.6400
  • 10:$0.5350
  • 100:$0.3450
  • 1000:$0.2760
  • 5000:$0.2330
BSZ180P03NS3 G
DISTI # 726-BSZ180P03NS3G		Infineon Technologies AGMOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
RoHS: Compliant		1855
  • 1:$0.6400
  • 10:$0.5350
  • 100:$0.3450
  • 1000:$0.2760
  • 5000:$0.2330
  • 10000:$0.2250
  • 25000:$0.2160
Image Part # Description
BSZ180P03NS3E G

Mfr.#: BSZ180P03NS3E G

OMO.#: OMO-BSZ180P03NS3E-G

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3GATMA1

Mfr.#: BSZ180P03NS3GATMA1

OMO.#: OMO-BSZ180P03NS3GATMA1

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3 G

Mfr.#: BSZ180P03NS3 G

OMO.#: OMO-BSZ180P03NS3-G

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3EGATMA1

Mfr.#: BSZ180P03NS3EGATMA1

OMO.#: OMO-BSZ180P03NS3EGATMA1

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3 G

Mfr.#: BSZ180P03NS3 G

OMO.#: OMO-BSZ180P03NS3-G-1190

 Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3 G)
BSZ180P03NS3E G

Mfr.#: BSZ180P03NS3E G

OMO.#: OMO-BSZ180P03NS3E-G-1190

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3EG

Mfr.#: BSZ180P03NS3EG

OMO.#: OMO-BSZ180P03NS3EG-1190

 Transistor MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3E G)
BSZ180P03NS3EGATMA1

Mfr.#: BSZ180P03NS3EGATMA1

OMO.#: OMO-BSZ180P03NS3EGATMA1-INFINEON-TECHNOLOGIES

 MOSFET P-CH 30V 39.6A TSDSON-8
BSZ180P03NS3G

Mfr.#: BSZ180P03NS3G

OMO.#: OMO-BSZ180P03NS3G-1190

 New and Original
BSZ180P03NS3GATMA1

Mfr.#: BSZ180P03NS3GATMA1

OMO.#: OMO-BSZ180P03NS3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET P-CH 30V 39.6A TSDSON-8
Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of BSZ180P03NS3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.64
$0.64
10
$0.53
$5.35
100
$0.34
$34.50
1000
$0.28
$276.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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