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IRFH5110TRPBF

IRFH5110TRPBF
Mfr. #:
IRFH5110TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFH5110TRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5110TRPBF DatasheetIRFH5110TRPBF Datasheet (P4-P6)IRFH5110TRPBF Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PQFN-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
63 A
Rds On - Drain-Source Resistance:
12.4 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
48 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
114 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
0.83 mm
Length:
6 mm
Transistor Type:
1 N-Channel
Width:
5 mm
Brand:
Infineon Technologies
Fall Time:
6.4 ns
Product Type:
MOSFET
Rise Time:
9.6 ns
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
7.8 ns
Part # Aliases:
SP001560340
Tags
IRFH511, IRFH51, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
IRFH5110TRPBF
DISTI # 33598714		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin PQFN EP T/R4000
  • 4000:$0.5560
IRFH5110TRPBF
DISTI # IRFH5110TRPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 11A 8-PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.6314
IRFH5110TRPBF
DISTI # V36:1790_13890295		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin PQFN EP T/R0
    IRFH5110TRPBF
    DISTI # IRFH5110TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel (Alt: IRFH5110TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 40000:$0.4159
    • 24000:$0.4239
    • 16000:$0.4389
    • 8000:$0.4549
    • 4000:$0.4719
    IRFH5110TRPBF
    DISTI # IRFH5110TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin QFN T/R (Alt: IRFH5110TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Asia - 0
      IRFH5110TRPBF
      DISTI # SP001560340      		Infineon Technologies AGTrans MOSFET N-CH 10V 11A 8-Pin QFN T/R (Alt: SP001560340)
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape and Reel      		Europe - 0
      • 40000:€0.4299
      • 24000:€0.4629
      • 16000:€0.5009
      • 8000:€0.5469
      • 4000:€0.6679
      IRFH5110TRPBF
      DISTI # 91Y4693      		Infineon Technologies AGMOSFET, N-CH, 100V, 63A, PQFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes11000
      • 1000:$0.6210
      • 500:$0.7880
      • 250:$0.8390
      • 100:$0.8910
      • 50:$0.9780
      • 25:$1.0600
      • 10:$1.1500
      • 1:$1.3500
      IRFH5110TRPBF
      DISTI # 70019272      		Infineon Technologies AGMOSFET 100V,Gen 10.7,11.68 mOhm max,56.2 nC Qg
      RoHS: Compliant      		0
      • 4000:$2.1700
      • 8000:$2.1270
      • 20000:$2.0620
      • 40000:$1.9750
      • 100000:$1.8450
      IRFH5110TRPBF
      DISTI # 942-IRFH5110TRPBF      		Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
      RoHS: Compliant      		2601
      • 1:$1.3400
      • 10:$1.1400
      • 100:$0.8820
      • 500:$0.7800
      • 1000:$0.6150
      • 4000:$0.5460
      • 8000:$0.5250
      IRFH5110TRPBF
      DISTI # 2580005      		Infineon Technologies AGMOSFET, N-CH, 100V, 63A, PQFN-8
      RoHS: Compliant      		8000
      • 100:$1.4400
      • 10:$1.7600
      • 1:$2.0300
      IRFH5110TRPBF
      DISTI # 2580005      		Infineon Technologies AGMOSFET, N-CH, 100V, 63A, PQFN-88000
      • 100:£0.8500
      • 25:£1.1000
      • 5:£1.2200
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      Availability
      Stock:
      Available
      On Order:
      1988
      Enter Quantity:
      Current price of IRFH5110TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.34
      $1.34
      10
      $1.14
      $11.40
      100
      $0.88
      $88.20
      500
      $0.78
      $390.00
      1000
      $0.62
      $615.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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