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SI4890BDY-T1-GE3

SI4890BDY-T1-GE3
Mfr. #:
SI4890BDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Lifecycle:
New from this manufacturer.
Datasheet:
SI4890BDY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4890BDY-T1-GE3 DatasheetSI4890BDY-T1-GE3 Datasheet (P4-P6)SI4890BDY-T1-GE3 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Series:
SI4
Width:
3.9 mm
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Part # Aliases:
SI4890BDY-GE3
Unit Weight:
0.006596 oz
Tags
SI4890, SI489, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si4890BDY Series N-Channel 30 V 12 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:10.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 16A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.5852
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4890BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5529
  • 5000:$0.5359
  • 10000:$0.5139
  • 15000:$0.4999
  • 25000:$0.4869
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R (Alt: SI4890BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.7209
  • 5000:€0.4919
  • 10000:€0.4229
  • 15000:€0.3909
  • 25000:€0.3639
SI4890BDY-T1-GE3
DISTI # 781-SI4890BDY-T1-GE3		Vishay IntertechnologiesMOSFET 30V 16A 5.7W 12mohm @ 10V
RoHS: Compliant		0
    Image Part # Description
    SI4890BDY-T1-GE3

    Mfr.#: SI4890BDY-T1-GE3

    OMO.#: OMO-SI4890BDY-T1-GE3

    		 MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
    SI4890BDY-T1-GE3

    Mfr.#: SI4890BDY-T1-GE3

    OMO.#: OMO-SI4890BDY-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 30V 16A 5.7W 12mohm @ 10V
    SI4890BDY-T1-E3

    Mfr.#: SI4890BDY-T1-E3

    OMO.#: OMO-SI4890BDY-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 30V 16A 5.7W 12mohm @ 10V
    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of SI4890BDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.32
    $1.32
    10
    $1.09
    $10.90
    100
    $0.84
    $84.00
    500
    $0.72
    $361.50
    1000
    $0.57
    $570.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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