STP3NK80Z

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

2.5 A

Rds On - Drain-Source Resistance:

4.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

19 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

70 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

SuperMESH

Height:

9.15 mm

Length:

10.4 mm

Series:

STP3NK80Z

Transistor Type:

1 N-Channel Power MOSFET

Type:

MOSFET

Width:

4.6 mm

Brand:

STMicroelectronics

Fall Time:

40 ns

Product Type:

MOSFET

Rise Time:

27 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

36 ns

Typical Turn-On Delay Time:

17 ns

Unit Weight:

0.070548 oz

Tags

STP3NK8, STP3NK, STP3N, STP3, STP