STW30N65M5

Mfr. #:: STW30N65M5
Manufacturer:: STMicroelectronics
Description:: MOSFET POWER MOSFET N-CH 650V 22 A
Lifecycle:: New from this manufacturer.
Datasheet:: STW30N65M5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STW30N65M5 more Information STW30N65M5 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 22 A

Rds On - Drain-Source Resistance:: 139 mOhms

Vgs th - Gate-Source Threshold Voltage:: 5 V

Vgs - Gate-Source Voltage:: 3 V

Qg - Gate Charge:: 64 nC

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 140 W

Configuration:: Single

Tradename:: MDmesh

Packaging:: Tube

Series:: STW30N65M5

Transistor Type:: 1 N-Channel

Type:: MDmesh V Power MOSFET

Brand:: STMicroelectronics

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 8 ns

Factory Pack Quantity:: 600

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 50 ns

Typical Turn-On Delay Time:: 50 ns

Unit Weight:: 1.340411 oz

Tags: STW30N, STW30, STW3, STW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STW30N65M5 Description

***icroelectronics: N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-247

***th Star Micro: Transistor MOSFET N-CH 650V 22A 3-Pin (3+Tab) TO-247 Tube

***ark: MOSFET, N-CH, 650V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 22A I(D), 650V, 0.139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***icroelectronics: N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247

***et Europe: Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube

*** Electronic Components: MOSFET POWER MOSFET N-CH 650V 24 A

***r Electronics: Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***et: STMICROELECTRONICS STW32N65M5 MOSFETS

***icroelectronics: N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package

***ical: Trans MOSFET N-CH 650V 28A 3-Pin(3+Tab) TO-247 Tube

***el Electronic: Processor Supervisor 4.65V 4.75V to 5.5V Automotive 16-Pin SOIC N Tube

***ure Electronics: N-Channel 650 V 28 A 110 mOhm Through Hole MDmesh V Power Mosfet - TO-247-3

*** Electronic Components: MOSFET N-Ch 650 V 0.098 Ohm 29 A MDmesh M5

***r Electronics: Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***enic: 650V 28A 90m´Î@10V14A 190W 4V@250uA 6.3pF@100V N Channel 2.7nF@100V 62.5nC@10V +150¡Í@(Tj) TO-247-3 MOSFETs ROHS

***S: French Electronic Distributor since 1988

***icroelectronics SCT: Power MOSFETs, 650V, 29A, TO-247, Tube

***icroelectronics: N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-247

*** Source Electronics: Trans MOSFET N-CH Si 650V 27A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 27A TO-247

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 27A I(D), 650V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***roFlash: Single N-Channel 650 V 150 mOhm 86 nC CoolMOS¬ô Power Mosfet - TO-247-3

***ment14 APAC: MOSFET, N-CH, 650V, 22.4A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Source Voltage Vds:650V; On Resistance

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 126 mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 25A I(D), 600V, 0.126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***ment14 APAC: MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

STW30N65M5 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

N-channel MDmesh V Power MOSFET: STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

STM MDmeshV Power MOSFETs - Thru-Hole

Market price

Part #	Mfg.	Description	Stock	Price
STW30N65M5 DISTI # V79:2366_17777324	STMicroelectronics	Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	1067	500:$5.5679 250:$6.1529 100:$6.6480 25:$7.5580 10:$8.0420 1:$9.8329
STW30N65M5 DISTI # V36:1790_06567952	STMicroelectronics	Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0	600000:$4.4030 300000:$4.4090 60000:$5.2880 6000:$7.1670 600:$7.5000
STW30N65M5 DISTI # 497-10655-5-ND	STMicroelectronics	MOSFET N-CH 650V 22A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	510:$6.1519 120:$7.0648 30:$8.1363 10:$8.5330 1:$9.4500
STW30N65M5 DISTI # 26111732	STMicroelectronics	Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	1067	2:$9.8329
STW30N65M5 DISTI # STW30N65M5	STMicroelectronics	Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW30N65M5) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$4.7900 3600:$4.8900 2400:$5.0900 1200:$5.3900 600:$5.5900
STW30N65M5 DISTI # STW30N65M5	STMicroelectronics	Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube (Alt: STW30N65M5) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€2.5900 500:€2.7900 100:€2.8900 50:€3.0900 25:€3.1900 10:€3.2900 1:€3.5900
STW30N65M5 DISTI # 45AC7785	STMicroelectronics	Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 45AC7785) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$6.1400 250:$6.4700 100:$7.6600 50:$8.1500 25:$8.6400 10:$9.0100 1:$9.8500
STW30N65M5 DISTI # 45AC7785	STMicroelectronics	MOSFET, N-CH, 650V, 22A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3PinsRoHS Compliant: Yes	134	1:$3.9500 10:$3.9500 25:$3.9500 50:$3.9500 100:$3.9500 250:$3.9500 500:$3.9500
STW30N65M5. DISTI # 32AC3706	STMicroelectronics	PTD HIGH VOLTAGE ROHS COMPLIANT: YES	0	500:$5.8900 250:$6.2000 100:$7.3300 50:$7.8100 25:$8.4500 10:$8.8100 1:$9.6300
STW30N65M5 DISTI # 511-STW30N65M5	STMicroelectronics	MOSFET POWER MOSFET N-CH 650V 22 A RoHS: Compliant	0	1:$8.9900 10:$8.1200 25:$7.7500 100:$6.7200 250:$6.4200 500:$5.8500 1000:$5.1000
STW30N65M5 DISTI # 7610317P	STMicroelectronics	MOSFET N-CHANNEL 650V 22A TO247, TU	192	10:£5.8800
STW30N65M5 DISTI # 2807324	STMicroelectronics	MOSFET, N-CH, 650V, 22A, TO-247	30	500:£4.5000 250:£4.9500 100:£5.1800 10:£5.9700 1:£7.4900
STW30N65M5 DISTI # 2807324	STMicroelectronics	MOSFET, N-CH, 650V, 22A, TO-247 RoHS: Compliant	1	510:$9.2800 120:$10.6500 30:$12.2700 10:$12.8600 1:$14.2400

Image	Part #	Description
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	Mfr.#: BTW69-800RG OMO.#: OMO-BTW69-800RG	SCRs 50 Amp 800 Volt
	Mfr.#: TYN840RG OMO.#: OMO-TYN840RG	SCRs 40 Amp 800 Volt
	Mfr.#: IRG4PC40KDPBF OMO.#: OMO-IRG4PC40KDPBF	IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
	Mfr.#: STW45N65M5 OMO.#: OMO-STW45N65M5	MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
	Mfr.#: LM5009MM/NOPB OMO.#: OMO-LM5009MM-NOPB	Switching Voltage Regulators 100V 250Ma Switching Reg
	Mfr.#: TYN840RG OMO.#: OMO-TYN840RG-STMICROELECTRONICS	SCRs 40 Amp 800 Volt
	Mfr.#: IXDN609PI OMO.#: OMO-IXDN609PI-IXYS-INTEGRATED-CIRCUITS-DIVIS	Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
	Mfr.#: 43650-0226 OMO.#: OMO-43650-0226-410	Headers & Wire Housings MicroFit 3.0 SR V SMT Nail 30Au 2Ckt
	Mfr.#: NTE0505MC OMO.#: OMO-NTE0505MC-MURATA-POWER-SOLUTIONS	Isolated DC/DC Converters 1W Single Output 5V to 5V 200mA

STW30N65M5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes