STF24N60DM2

Mfr. #:: STF24N60DM2
Manufacturer:: STMicroelectronics
Description:: MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package
Lifecycle:: New from this manufacturer.
Datasheet:: STF24N60DM2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STF24N60DM2 more Information STF24N60DM2 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 18 A

Rds On - Drain-Source Resistance:: 175 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 29 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 30 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: MDmesh

Series:: STF24N60DM2

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Fall Time:: 15 ns

Product Type:: MOSFET

Rise Time:: 8.7 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 60 ns

Typical Turn-On Delay Time:: 15 ns

Unit Weight:: 0.011640 oz

Tags: STF24N60, STF24N6, STF24N, STF24, STF2, STF

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STF24N60DM2 Description

***icroelectronics: N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 600 V 0.2 O 30 W Flange Mount FDmesh II Plus Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 18A 30W 200m´Î@10V9A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ark: MOSFET, N-CH, 600V, 18A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220 package

***ure Electronics: Single N-Channel 600 V 0.2 Ohm 29 nC 150 W Silicon Flange Mount Mosfet TO-220-3

***ical: Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N-CH, 600V, 18A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP package

***ical: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube

***ark: Mosfet, N-Ch, 600V, 20A, 150Deg C, 30W Rohs Compliant: Yes

***ure Electronics: N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP

***icroelectronics SCT: Power MOSFETs, 600V, 20A, TO-220FP, Tube

***icroelectronics: N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220 package

***et: Power MOSFET, N-ch, MDmesh M2 EP, 600V, 20A, 3-pin (3+tab) TO-220, Tube

***i-Key: MOSFET N-CH 600V 20A TO220

***r Electronics: Power Field-Effect Transistor

***ark: Dfd Thyr Triac & Rectifier

***el Electronic: CAP CER 2.2UF 10V X7R RADIAL

***ical: Trans MOSFET N-CH Si 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak

***el Electronic: VISHAY SIHA22N60E-E3 MOSFET, N CHANNEL, 600V, 21A, TO-220F

***et: E SERIES HIGH VOLTAGE THIN-LEAD TO-220 FULLPAK 9 POWER MOSFE

***id Electronics: Power Field-Effect Transistor 8A I(D) 600V

***ark: MOSFET, N CHANNEL, 600V, 21A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F

***et: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail

*** Stop Electro: Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F

***ical: Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Rail

***r Electronics: Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.

STF24N60DM2 More Information

MDmesh DM2 Power MOSFETs: STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Part #	Mfg.	Description	Stock	Price
STF24N60DM2 DISTI # 497-15115-5-ND	STMicroelectronics	MOSFET N-CH 600V 18A TO220FP RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$2.5950 500:$3.0240 100:$3.6675 50:$3.9976 1:$4.9100
STF24N60DM2 DISTI # STF24N60DM2	STMicroelectronics	Trans MOSFET N-CH 650V 18A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: STF24N60DM2) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$2.1900 2000:$2.0900 4000:$1.9900 6000:$1.8900 10000:$1.8900
STF24N60DM2 DISTI # STF24N60DM2	STMicroelectronics	Trans MOSFET N-CH 650V 18A 3-Pin TO-220 FP Tube (Alt: STF24N60DM2) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.8900 10:€1.6900 25:€1.5900 50:€1.4900 100:€1.3900 500:€1.3900 1000:€1.2900
STF24N60DM2 DISTI # 45AC7567	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes	329	1:$2.4500
STF24N60DM2 DISTI # 511-STF24N60DM2	STMicroelectronics	MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package RoHS: Compliant	0	1:$3.9700 10:$3.3700 100:$2.9200 250:$2.7700 500:$2.4900 1000:$2.0900
STF24N60DM2 DISTI # STF24N60DM2	STMicroelectronics	Transistor: N-MOSFET,unipolar,600V,11A,30W,TO220FP	40	1:$3.5300 5:$3.0300 25:$2.4300 100:$2.2000
STF24N60DM2 DISTI # 2807255	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP RoHS: Compliant	580	1000:$3.6600 500:$4.3400 100:$5.3600 50:$5.8800 1:$7.3100
STF24N60DM2 DISTI # 2807255	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP RoHS: Compliant	600	500:£2.1400 250:£2.4000 100:£2.6500 10:£2.9000 1:£4.0200

Image	Part #	Description
	Mfr.#: STF24N60M6 OMO.#: OMO-STF24N60M6	MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220FP package
	Mfr.#: STF24N60M6 OMO.#: OMO-STF24N60M6-STMICROELECTRONICS	NCHANNEL 600 V 105 MOHM TYP. 22
	Mfr.#: STF24N60M2-- OMO.#: OMO-STF24N60M2---1190	New and Original
	Mfr.#: STF2458 OMO.#: OMO-STF2458-1190	New and Original
	Mfr.#: STF2460K OMO.#: OMO-STF2460K-1190	New and Original
	Mfr.#: STF24N60DM2 OMO.#: OMO-STF24N60DM2-STMICROELECTRONICS	MOSFET N-CH 600V 18A TO220FP
	Mfr.#: STF24N60M2 OMO.#: OMO-STF24N60M2-STMICROELECTRONICS	MOSFET N-CH 600V 18A TO220FP
	Mfr.#: STF24NM60N/IXFP22N65X2 OMO.#: OMO-STF24NM60N-IXFP22N65X2-1190	New and Original
	Mfr.#: STF24NM65N OMO.#: OMO-STF24NM65N-STMICROELECTRONICS	MOSFET N-CH 650V 19A TO-220FP
	Mfr.#: STF24NM65N,24NM65N OMO.#: OMO-STF24NM65N-24NM65N-1190	New and Original

STF24N60DM2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes