IPN50R800CEATMA1

IPN50R800CEATMA1
Mfr. #:
IPN50R800CEATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Datasheet:
IPN50R800CEATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPN50R800CEATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-223-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
5 A
Rds On - Drain-Source Resistance:
1.87 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
12.4 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
1.6 mm
Length:
6.5 mm
Series:
CoolMOS CE
Transistor Type:
1 N-Channel
Width:
3.5 mm
Brand:
Infineon Technologies
Fall Time:
15.9 ns
Product Type:
MOSFET
Rise Time:
5.5 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
6.2 ns
Part # Aliases:
IPN50R800CE SP001461196
Unit Weight:
0.003951 oz
Tags
IPN50, IPN5, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 5A 3-Pin SOT-223 T/R
***ark
Mosfet, N-Ch, 500V, 7.6A, Sot-223-3; Transistor Polarity:n Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.72Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
Part # Mfg. Description Stock Price
IPN50R800CEATMA1
DISTI # V72:2272_14663628
Infineon Technologies AGTrans MOSFET N-CH 500V 5A 3-Pin SOT-223 T/R29
  • 75000:$0.1756
  • 30000:$0.1802
  • 15000:$0.1850
  • 6000:$0.1899
  • 3000:$0.1921
  • 1000:$0.2441
  • 500:$0.2552
  • 250:$0.2836
  • 100:$0.3151
  • 50:$0.4412
  • 25:$0.4620
  • 10:$0.5646
  • 1:$0.6708
IPN50R800CEATMA1
DISTI # IPN50R800CEATMA1CT-ND
Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5777In Stock
  • 1000:$0.2646
  • 500:$0.3424
  • 100:$0.4358
  • 10:$0.5840
  • 1:$0.6800
IPN50R800CEATMA1
DISTI # IPN50R800CEATMA1DKR-ND
Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5777In Stock
  • 1000:$0.2646
  • 500:$0.3424
  • 100:$0.4358
  • 10:$0.5840
  • 1:$0.6800
IPN50R800CEATMA1
DISTI # IPN50R800CEATMA1TR-ND
Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.1934
  • 15000:$0.2040
  • 6000:$0.2191
  • 3000:$0.2342
IPN50R800CEATMA1
DISTI # IPN50R800CEATMA1
Infineon Technologies AGTrans MOSFET N 550V 7.6A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN50R800CEATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1819
  • 18000:$0.1859
  • 12000:$0.1919
  • 6000:$0.1989
  • 3000:$0.2069
IPN50R800CEATMA1
DISTI # SP001461196
Infineon Technologies AGTrans MOSFET N 550V 7.6A 3-Pin SOT-223 T/R (Alt: SP001461196)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1709
  • 18000:€0.1839
  • 12000:€0.1989
  • 6000:€0.2179
  • 3000:€0.2659
IPN50R800CEATMA1
DISTI # 97Y1830
Infineon Technologies AGMOSFET, N-CH, 500V, 7.6A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.72ohm,Rds(on) Test Voltage Vgs:13V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes500
  • 1000:$0.2470
  • 500:$0.2720
  • 250:$0.2960
  • 100:$0.3200
  • 50:$0.3890
  • 25:$0.4570
  • 10:$0.5250
  • 1:$0.6260
IPN50R800CEATMA1
DISTI # 726-IPN50R800CEATMA1
Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant
364
  • 1:$0.6200
  • 10:$0.5200
  • 100:$0.3170
  • 1000:$0.2450
  • 3000:$0.2090
IPN50R800CEATMA1
DISTI # 1300915P
Infineon Technologies AGMOSFET N-CH 500V 7.6A COOLMOS CE SOT-223, RL750
  • 2500:£0.2100
  • 1000:£0.2190
  • 500:£0.2260
  • 125:£0.2350
IPN50R800CEATMA1
DISTI # 2617455
Infineon Technologies AGMOSFET, N-CH, 500V, 7.6A, SOT-223-32755
  • 500:£0.1890
  • 250:£0.2170
  • 100:£0.2440
  • 10:£0.4450
  • 1:£0.5470
IPN50R800CEATMA1
DISTI # 2617455
Infineon Technologies AGMOSFET, N-CH, 500V, 7.6A, SOT-223-3
RoHS: Compliant
500
  • 1000:$0.3990
  • 500:$0.5160
  • 100:$0.6570
  • 10:$0.8800
  • 1:$1.0200
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OMO.#: OMO-TPS63710DRRR-TEXAS-INSTRUMENTS

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Availability
Stock:
344
On Order:
2327
Enter Quantity:
Current price of IPN50R800CEATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.62
$0.62
10
$0.52
$5.20
100
$0.32
$31.70
1000
$0.24
$245.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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