OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SISS66DN-T1-GE3

SISS66DN-T1-GE3
Mfr. #:
SISS66DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-Channel 30 V (D-S) MOSFET with Schottky Diode
Lifecycle:
New from this manufacturer.
Datasheet:
SISS66DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
178.3 A
Rds On - Drain-Source Resistance:
1.38 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
- 16 V, 20 V
Qg - Gate Charge:
57 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
65.8 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerPAK
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
84 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
18 ns
Tags
SISS6, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Image Part # Description
SISS66DN-T1-GE3

Mfr.#: SISS66DN-T1-GE3

OMO.#: OMO-SISS66DN-T1-GE3

 MOSFET N-Channel 30 V (D-S) MOSFET with Schottky Diode
Availability
Stock:
50
On Order:
2033
Enter Quantity:
Current price of SISS66DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.52
$1.52
10
$1.25
$12.50
100
$0.96
$96.10
500
$0.83
$413.00
1000
$0.65
$652.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
  • -12 V and -20 V P-Channel Gen III MOSFETs
    -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Compare SISS66DN-T1-GE3
    Compare SISS66DN-T1-GE3
    SISS60DNT1GE3 vs SISS61DNT1GE3 vs SISS64DNT1GE3
  • Smart Load Switches
    Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • SUM70101EL 100 V P-Channel MOSFET
    SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
More Newest Products
Top