FQB7P20TM_F085

Mfr. #:: FQB7P20TM_F085
Manufacturer:: Fairchild Semiconductor
Description:: IGBT Transistors MOSFET 200V P-Channel QFET
Lifecycle:: New from this manufacturer.
Datasheet:: FQB7P20TM_F085 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: Transistors - FETs, MOSFETs - Single

Packaging: Reel

Unit-Weight: 0.046296 oz

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Transistor-Type: 1 P-Channel

Id-Continuous-Drain-Current: - 7.3 A

Vds-Drain-Source-Breakdown-Voltage: - 200 V

Rds-On-Drain-Source-Resistance: 690 mOhms

Transistor-Polarity: P-Channel

Tags: FQB7P20TM-F, FQB7P20T, FQB7P2, FQB7P, FQB7, FQB

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQB7P20TM_F085 Description

***ow.cn: Trans MOSFET P-CH 200V 7.3A Automotive 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, P CH, -200V, -7.3A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.3A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:90W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: These P-Channel enchancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Technology.This advanced Technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. These devices are well suited for high efficiency switching DC/DC converters.

***icroelectronics: N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package

***et: Trans MOSFET N-CH 525V 10A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 10A I(D), 525V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 525V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***emi: N-Channel Power MOSFET, QFET®, 500 V, 9 A, 800 mΩ, D2PAK

***ure Electronics: N-Channel 500 V 0.8 Ohm Surface Mount Mosfet - D2PAK-3

***ical: Trans MOSFET N-CH 500V 9A 3-Pin (2+Tab) D2PAK T/R

***nell: MOSFET, N CH, 500V, 9A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:135W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***ure Electronics: Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)

***ical: Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N-CH, 650V, 7A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited

***ark: MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai

***ure Electronics: Single P-Channel 60 V 130 mOhm 21 nC SIPMOS® Power Mosfet - D2PAK

***nell: MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.101ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:81.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***emi: P-Channel Power MOSFET, QFET®, -60 V, -27 A, 70 mΩ, D2PAK

***ure Electronics: P-Channel 60 V 70 mOhm Surface Mount Mosfet - D2PAK-3

*** Electronics: ON SEMICONDUCTOR - FQB27P06TM - MOSFET Transistor, P Channel, 27 A, -60 V, 0.055 ohm, -10 V, -4 V

***ical: Trans MOSFET P-CH 60V 27A 3-Pin (2+Tab) D2PAK T/R

*** Stop Electro: Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:120W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-27A; Package / Case:D2-PAK; Power Dissipation Pd:120W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ure Electronics: IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263

***ical: Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK

***ark: N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, N, 200V, 9A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 74W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D2-PAK; Current Id Max: 9A; Junction to Case Thermal Resistance A: 1.7°C/W; On State resistance @ Vgs = 10V: 300mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 36A; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Market price

Part #	Mfg.	Description	Stock	Price
FQB7P20TM-F085 DISTI # V72:2272_06301095	ON Semiconductor	ICE MOSFET	800	1:$0.7686
FQB7P20TM-F085 DISTI # V36:1790_06301095	ON Semiconductor	ICE MOSFET	0
FQB7P20TM-F085 DISTI # FQB7P20TM-F085CT-ND	ON Semiconductor	MOSFET P-CH 200V 7.3A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	528In Stock	100:$1.9497 10:$2.4260 1:$2.6900
FQB7P20TM-F085 DISTI # FQB7P20TM-F085DKR-ND	ON Semiconductor	MOSFET P-CH 200V 7.3A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	528In Stock	100:$1.9497 10:$2.4260 1:$2.6900
FQB7P20TM-F085 DISTI # FQB7P20TM-F085TR-ND	ON Semiconductor	MOSFET P-CH 200V 7.3A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Limited Supply - Call	5600:$1.0937 2400:$1.1357 1600:$1.2199 800:$1.3292
FQB7P20TM-F085 DISTI # 32434249	ON Semiconductor	ICE MOSFET	1600	800:$0.9705
FQB7P20TM-F085 DISTI # 19269308	ON Semiconductor	ICE MOSFET	1600	800:$0.3000
FQB7P20TM-F085 DISTI # 25921750	ON Semiconductor	ICE MOSFET	800	7:$0.7686
FQB7P20TM_F085 DISTI # FQB7P20TM-F085	ON Semiconductor	Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB7P20TM-F085) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 800	1600:$0.7648 800:$0.7656
FQB7P20TM_F085 DISTI # FQB7P20TM-F085	ON Semiconductor	Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB7P20TM-F085) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0
FQB7P20TM_F085 DISTI # FQB7P20TM-F085	ON Semiconductor	Trans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB7P20TM-F085) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	8000:$0.9442 4800:$0.9681 3200:$0.9805 1600:$0.9932 800:$0.9997
FQB7P20TM-F085P DISTI # FQB7P20TM-F085P	ON Semiconductor	- Tape and Reel (Alt: FQB7P20TM-F085P) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0
FQB7P20TM_F085 DISTI # 84W8879	ON Semiconductor	MOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A, TO-263-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.3A,Drain Source Voltage Vds:-200V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:-10V,No. of Pins:3Pins RoHS Compliant: Yes	0	500:$0.9800 250:$1.0800 100:$1.2600 50:$1.4400 25:$1.6100 10:$1.7900 1:$2.0300
FQB7P20TM_F085 DISTI # 64R3109	ON Semiconductor	MOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A, TO-263-3, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.3A,Drain Source Voltage Vds:-200V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:-10V RoHS Compliant: Yes	1600	1:$0.2400 800:$0.2400 1600:$0.2400 3200:$0.2400 4800:$0.2400
FQB7P20TM-F085 DISTI # 48AC1172	ON Semiconductor	PMOS D2PAK 200V 690 MOHM / REEL	0	1000:$1.3900 500:$1.5000 250:$1.6200 100:$1.7900 1:$2.2100
FQB7P20TM-F085 DISTI # 95W3212	ON Semiconductor	MOSFET Transistor, P Channel, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V RoHS Compliant: Yes	726	500:$1.3400 250:$1.4400 100:$1.5500 50:$1.6700 25:$1.8000 10:$1.9300 1:$2.2700
FQB7P20TM-F085 DISTI # 512-FQB7P20TM_F085	ON Semiconductor	MOSFET 200V P-Channel QFET RoHS: Compliant	0	1:$2.2500 10:$1.9100 100:$1.5300 500:$1.3300 800:$1.1000 2400:$1.0300 4800:$0.9950
FQB7P20TM-F085 DISTI # 2322624RL	ON Semiconductor	MOSFET, P CH, -200V, -7.3A, TO-263-3 RoHS: Compliant	0	9600:$1.4700 4800:$1.5300 2400:$1.5900 800:$1.7000 500:$2.0400 100:$2.3600 10:$2.9400 1:$3.4600
FQB7P20TM-F085 DISTI # 2323208	ON Semiconductor	MOSFET, P CH, -200V, -7.3A, TO-263-3 RoHS: Compliant	0	9600:$1.4700 4800:$1.5300 2400:$1.5900 800:$1.7000
FQB7P20TM"F085 DISTI # 2345307	ON Semiconductor	MOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A, TO-263-3, FULL REEL RoHS: Compliant	1600	800:$1.0700
FQB7P20TM-F085 DISTI # 2322624	ON Semiconductor	MOSFET, P CH, -200V, -7.3A, TO-263-3 RoHS: Compliant	726	9600:$1.4700 4800:$1.5300 2400:$1.5900 800:$1.7000 500:$2.0400 100:$2.3600 10:$2.9400 1:$3.4600
FQB7P20TM"F085 DISTI # 2345307	ON Semiconductor	MOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A RoHS: Compliant	1600	3200:£0.6980 1600:£0.7150 800:£0.7330
FQB7P20TM-F085 DISTI # 2322624	ON Semiconductor	MOSFET, P CH, -200V, -7.3A, TO-263-3	726	250:£0.9090 100:£1.0500 50:£1.3100 10:£1.3200 1:£1.7100

Image	Part #	Description
	Mfr.#: FQB7P20TM OMO.#: OMO-FQB7P20TM	MOSFET 200V P-Channel QFET
	Mfr.#: FQB7P20TM-F085 OMO.#: OMO-FQB7P20TM-F085	MOSFET 200V P-Channel QFET
	Mfr.#: FQB7P20 OMO.#: OMO-FQB7P20-1190	New and Original
	Mfr.#: FQB7P20TM OMO.#: OMO-FQB7P20TM-ON-SEMICONDUCTOR	MOSFET P-CH 200V 7.3A D2PAK
	Mfr.#: FQB7P20TM-NL OMO.#: OMO-FQB7P20TM-NL-1190	New and Original
	Mfr.#: FQB7P20TM-F085 OMO.#: OMO-FQB7P20TM-F085-ON-SEMICONDUCTOR	MOSFET P-CH 200V 7.3A D2PAK
	Mfr.#: FQB7P20TM_F085 OMO.#: OMO-FQB7P20TM-F085-126	IGBT Transistors MOSFET 200V P-Channel QFET
	Mfr.#: FQB7P20TM-F085P OMO.#: OMO-FQB7P20TM-F085P-1190	- Tape and Reel (Alt: FQB7P20TM-F085P)

FQB7P20TM_F085

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes