IPB083N10N3GATMA1

IPB083N10N3GATMA1
Mfr. #:
IPB083N10N3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB083N10N3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
7.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
55 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
45 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
42 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
G IPB083N10N3 IPB83N1N3GXT SP000458812
Unit Weight:
0.068654 oz
Tags
IPB083N10N3G, IPB083N10, IPB083, IPB08, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***et
Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263
***el Electronic
Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
***ment14 APAC
MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***p One Stop Global
Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1.1pF 100volts C0G +/-0.25pF
***ment14 APAC
MOSFET, N-CH, 75V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:75V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 75V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 75V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 150W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***emi
N-Channel PowerTrench® MOSFET, 40V, 70A, 9mΩ
***ure Electronics
N-Channel 40 V 9 mOhm Surface Mount PowerTrench Mosfet - TO-263AB
***r Electronics
Power Field-Effect Transistor, 70A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:92W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; SMD Marking:FDB8445; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
*** Source Electronics
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***ure Electronics
P-Channel 100 V 0.06 Ohm Surface Mount Mosfet - D2PAK-3
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33.5mA; On Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ark
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:55A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: No
***nell
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 155W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 55A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation on 1" Sq. PCB: 3.75W; Pulse Current Idm: 220A; SMD Marking: FQB55N10; Termination Type: Surface Mount Device; Voltage Vds: 100V; Voltage Vds Typ: 100V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Part # Mfg. Description Stock Price
IPB083N10N3GATMA1
DISTI # V72:2272_06383633
Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB083N10N3GATMA1
    DISTI # V36:1790_06383633
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    0
    • 1000000:$0.5242
    • 500000:$0.5246
    • 100000:$0.5797
    • 10000:$0.6897
    • 1000:$0.7088
    IPB083N10N3GATMA1
    DISTI # IPB083N10N3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 100V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    2000In Stock
    • 10000:$0.6048
    • 5000:$0.6284
    • 2000:$0.6615
    • 1000:$0.7087
    IPB083N10N3GATMA1
    DISTI # IPB083N10N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 100V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    2000In Stock
    • 500:$0.9247
    • 100:$1.1194
    • 10:$1.4360
    • 1:$1.6100
    IPB083N10N3GATMA1
    DISTI # IPB083N10N3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 100V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    2000In Stock
    • 500:$0.9247
    • 100:$1.1194
    • 10:$1.4360
    • 1:$1.6100
    IPB083N10N3GXT
    DISTI # IPB083N10N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB083N10N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$0.4569
    • 6000:$0.4649
    • 4000:$0.4809
    • 2000:$0.4999
    • 1000:$0.5179
    IPB083N10N3GATMA1
    DISTI # 47Y8048
    Infineon Technologies AGMOSFET Transistor, N Channel, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V RoHS Compliant: Yes758
    • 500:$0.8650
    • 250:$0.9210
    • 100:$0.9780
    • 50:$1.0800
    • 25:$1.1700
    • 10:$1.2700
    • 1:$1.4800
    IPB083N10N3 G
    DISTI # 726-IPB083N10N3G
    Infineon Technologies AGMOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    13901
    • 1:$1.4700
    • 10:$1.2600
    • 100:$0.9680
    • 500:$0.8560
    • 1000:$0.6750
    • 2000:$0.5990
    • 10000:$0.5770
    IPB083N10N3GATMA1
    DISTI # 726-IPB083N10N3GATMA
    Infineon Technologies AGMOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    2169
    • 1:$1.4700
    • 10:$1.2600
    • 100:$0.9680
    • 500:$0.8560
    • 1000:$0.6750
    • 2000:$0.5990
    • 10000:$0.5770
    IPB083N10N3GATMA1
    DISTI # 8977361P
    Infineon Technologies AGMOSFET N-CHANNEL 100V 80A OPTIMOS TO263, RL3216
    • 2000:£0.4840
    • 800:£0.6140
    • 400:£0.6940
    • 80:£0.9000
    IPB083N10N3GATMA1
    DISTI # IPB083N10N3GATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO263-3664
    • 500:$0.6081
    • 100:$0.6306
    • 25:$0.6757
    • 5:$0.7523
    • 1:$0.8514
    IPB083N10N3GATMA1
    DISTI # 2443432
    Infineon Technologies AGMOSFET, N CH, 100V, 80A, TO-263-3739
    • 500:£0.6670
    • 250:£0.7100
    • 100:£0.7530
    • 10:£1.0300
    • 1:£1.3100
    IPB083N10N3GATMA1
    DISTI # 2443432
    Infineon Technologies AGMOSFET, N CH, 100V, 80A, TO-263-3
    RoHS: Compliant
    758
    • 1000:$1.0200
    • 500:$1.2900
    • 100:$1.4600
    • 10:$1.9000
    • 1:$2.2200
    Image Part # Description
    LM4040D10IDBZR

    Mfr.#: LM4040D10IDBZR

    OMO.#: OMO-LM4040D10IDBZR

    Voltage References 10-V Prec Micropower Shunt 1% accuracy
    LM4040D50IDBZT

    Mfr.#: LM4040D50IDBZT

    OMO.#: OMO-LM4040D50IDBZT

    Voltage References 5V Precision Mcrpwr Shunt 1% acc
    NSR02100HT1G

    Mfr.#: NSR02100HT1G

    OMO.#: OMO-NSR02100HT1G

    Schottky Diodes & Rectifiers SS SOD323 SHKY DIO 100V T
    NTSB20100CTT4G

    Mfr.#: NTSB20100CTT4G

    OMO.#: OMO-NTSB20100CTT4G

    Schottky Diodes & Rectifiers 20A 100V LVFR DUAL D2PAK
    PQ2617BHA-100K

    Mfr.#: PQ2617BHA-100K

    OMO.#: OMO-PQ2617BHA-100K

    Fixed Inductors 10uH 10% 28A AEC-Q200 GULL WING
    EMK212B7475KG-T

    Mfr.#: EMK212B7475KG-T

    OMO.#: OMO-EMK212B7475KG-T-TAIYO-YUDEN

    Multilayer Ceramic Capacitors MLCC - SMD/SMT STD 0805 X7R 16V 4.7uF 10%
    LM4040D50IDBZT

    Mfr.#: LM4040D50IDBZT

    OMO.#: OMO-LM4040D50IDBZT-TEXAS-INSTRUMENTS

    Voltage References 5V Precision Mcrpwr Shunt 1% acc
    LM4040D10IDBZR

    Mfr.#: LM4040D10IDBZR

    OMO.#: OMO-LM4040D10IDBZR-TEXAS-INSTRUMENTS

    Voltage References 10-V Prec Micropower Shunt 1% accuracy
    NTSB20100CTT4G

    Mfr.#: NTSB20100CTT4G

    OMO.#: OMO-NTSB20100CTT4G-ON-SEMICONDUCTOR

    Schottky Diodes & Rectifiers 20A 100V LVFR DUAL D2PAK
    PQ2617BHA-100K

    Mfr.#: PQ2617BHA-100K

    OMO.#: OMO-PQ2617BHA-100K-BOURNS

    INDUCTOR, SHIELDED, 10UH, 10%, AEC-Q200
    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of IPB083N10N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.47
    $1.47
    10
    $1.26
    $12.60
    100
    $0.97
    $96.80
    500
    $0.86
    $428.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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