 | |  | |
| PartNumber | IPB083N10N3 G | IPB083N10N3GATMA1 | IPB083N15N5LFATMA1 |
| Description | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | MOSFET |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 150 V |
| Id Continuous Drain Current | 80 A | 80 A | 105 A |
| Rds On Drain Source Resistance | 7.2 mOhms | 7.2 mOhms | 6.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 3.3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 55 nC | 55 nC | 45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 125 W | 125 W | 179 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 45 S | 45 S | 9 S |
| Fall Time | 8 ns | 8 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 42 ns | 42 ns | 46 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 31 ns | 25 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns | 7 ns |
| Part # Aliases | IPB083N10N3GATMA1 IPB83N1N3GXT SP000458812 | G IPB083N10N3 IPB83N1N3GXT SP000458812 | IPB083N15N5LF SP001503862 |
| Unit Weight | 0.068654 oz | 0.068654 oz | 0.077603 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB083N10N3 G | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | |
| IPB083N10N3GATMA1 | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | ||
| IPB083N15N5LFATMA1 | MOSFET N-CH 150V 105A TO263-3 | ||
| IPB083N10N3GATMA1 | MOSFET N-CH 100V 80A TO263-3 | ||
Infineon Technologies |
IPB083N15N5LFATMA1 | MOSFET | |
| IPB083N10N3G | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 | ||
| IPB083N10N3G. | New and Original | ||
| IPB083N10N3 | New and Original | ||
| IPB083N10N3 G | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | ||
| IPB083N10N3G , 2SD1936T | New and Original | ||
| IPB083N10N3GATMA1 , 2SD1 | New and Original |