PartNumber | IPB080N03L G | IPB080N06N G | IPB080N03LGATMA1 |
Description | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 60V 80A D2PAK-2 | MOSFET N-CH 30V 50A TO263-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 60 V | - |
Id Continuous Drain Current | 50 A | 80 A | - |
Rds On Drain Source Resistance | 8 mOhms | 8 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 47 W | 214 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 2.8 ns | 14 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.6 ns | 15 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 18 ns | 32 ns | - |
Typical Turn On Delay Time | 4.6 ns | 14 ns | - |
Part # Aliases | IPB080N03LGATMA1 IPB8N3LGXT SP000304104 | IPB080N06NGXT SP000204174 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |