IPB081N06L3 G

Mfr. #:: IPB081N06L3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB081N06L3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPB081N06L3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 50 A

Rds On - Drain-Source Resistance:: 6.7 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 29 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 79 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 35 S

Fall Time:: 7 ns

Product Type:: MOSFET

Rise Time:: 26 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 37 ns

Typical Turn-On Delay Time:: 15 ns

Part # Aliases:: IPB081N06L3GATMA1 IPB81N6L3GXT SP000398076

Unit Weight:: 0.139332 oz

Tags: IPB081N06L3G, IPB081, IPB08, IPB0, IPB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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IPB081N06L3 G More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB081N06L3GATMA1 DISTI # V72:2272_06384674	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	990	500:$0.8331 250:$0.8476 100:$0.9417 25:$1.1252 10:$1.2502 1:$1.6010
IPB081N06L3GATMA1 DISTI # V36:1790_06384674	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.5248 500000:$0.5252 100000:$0.5803 10000:$0.6904 1000:$0.7095
IPB081N06L3GATMA1 DISTI # IPB081N06L3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1408In Stock	500:$0.9257 100:$1.1206 10:$1.4370 1:$1.6100
IPB081N06L3GATMA1 DISTI # IPB081N06L3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1408In Stock	500:$0.9257 100:$1.1206 10:$1.4370 1:$1.6100
IPB081N06L3GATMA1 DISTI # IPB081N06L3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	10000:$0.6055 5000:$0.6291 2000:$0.6622 1000:$0.7095
IPB081N06L3 G DISTI # 32730981	Infineon Technologies AG	0	1000	13:$1.9500
IPB081N06L3GATMA1 DISTI # 31919767	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	990	12:$1.6010
IPB081N06L3G DISTI # SP000398076	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398076) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 36200	10000:€0.5249 6000:€0.5649 4000:€0.6119 2000:€0.6679 1000:€0.8159
IPB081N06L3GXT DISTI # IPB081N06L3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB081N06L3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.5719 6000:$0.5819 4000:$0.6029 2000:$0.6249 1000:$0.6489
IPB081N06L3GATMA1 DISTI # 60R2670	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	681	500:$0.8650 100:$0.9790 10:$1.2700 1:$1.4800
IPB081N06L3 G DISTI # 726-IPB081N06L3G	Infineon Technologies AG	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	3004	1:$1.4700 10:$1.2600 100:$0.9690 500:$0.8560 1000:$0.6760 2000:$0.6000 10000:$0.5770
IPB081N06L3GATMA1 DISTI # 726-IPB081N06L3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	2030	1:$1.4700 10:$1.2600 100:$0.9690 500:$0.8560 1000:$0.6760 2000:$0.6000 10000:$0.5770
IPB081N06L3GATMA1 DISTI # 8269525P	Infineon Technologies AG	MOSFET N-CH 50A 60V OPTIMOS3 TO263, RL	975	1000:£0.4720 500:£0.5830 250:£0.6220 100:£0.6600
IPB081N06L3G DISTI # IPB081N06L3G	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,50A,79W,PG-TO263-3	890	500:$0.6800 100:$0.7300 10:$0.8100 3:$0.9900 1:$1.0700
IPB081N06L3GATMA1 DISTI # XSKDRABV0051843	Infineon Technologies AG	RoHS: Compliant	2200 in Stock0 on Order	2200:$0.7747 1000:$0.8300
IPB081N06L3GATMA1 DISTI # 1775548	Infineon Technologies AG	MOSFET, N CH, 50A, 60V, PG-TO263-3	1791	500:£0.6670 250:£0.7110 100:£0.7540 10:£1.0300 1:£1.3100
IPB081N06L3GATMA1 DISTI # 1775548	Infineon Technologies AG	MOSFET, N CH, 50A, 60V, PG-TO263-3 RoHS: Compliant	681	2000:$0.9040 1000:$1.0200 500:$1.2900 100:$1.4600 10:$1.9000 1:$2.2200

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of IPB081N06L3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.47~~; ~~$1.47~~

10: ~~$1.26~~; ~~$12.60~~

100: ~~$0.97~~; ~~$96.90~~

500: ~~$0.86~~; ~~$428.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB081N06L3 G

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