IPB083N10N3 G

IPB083N10N3 G
Mfr. #:
IPB083N10N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB083N10N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB083N10N3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
7.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
55 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
45 S
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
42 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
IPB083N10N3GATMA1 IPB83N1N3GXT SP000458812
Unit Weight:
0.068654 oz
Tags
IPB083N10N3G, IPB083N10, IPB083, IPB08, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB083N10N3G
DISTI # 31073262
Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263
RoHS: Compliant
284
  • 18:$1.4625
IPB083N10N3GATMA1
DISTI # IPB083N10N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
2000In Stock
  • 10000:$0.6048
  • 5000:$0.6284
  • 2000:$0.6615
  • 1000:$0.7087
IPB083N10N3GATMA1
DISTI # IPB083N10N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2000In Stock
  • 500:$0.9247
  • 100:$1.1194
  • 10:$1.4360
  • 1:$1.6100
IPB083N10N3GATMA1
DISTI # IPB083N10N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2000In Stock
  • 500:$0.9247
  • 100:$1.1194
  • 10:$1.4360
  • 1:$1.6100
IPB083N10N3GATMA1
DISTI # V72:2272_06383633
Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB083N10N3GATMA1
    DISTI # V36:1790_06383633
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    0
    • 1000000:$0.5242
    • 500000:$0.5246
    • 100000:$0.5797
    • 10000:$0.6897
    • 1000:$0.7088
    IPB083N10N3G
    DISTI # SP000458812
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-263 T/R (Alt: SP000458812)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 6000
    • 10000:€0.4559
    • 6000:€0.4909
    • 4000:€0.5319
    • 2000:€0.5799
    • 1000:€0.7089
    IPB083N10N3GXT
    DISTI # IPB083N10N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB083N10N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$0.4569
    • 6000:$0.4649
    • 4000:$0.4809
    • 2000:$0.4999
    • 1000:$0.5179
    IPB083N10N3GATMA1
    DISTI # 47Y8048
    Infineon Technologies AGMOSFET Transistor, N Channel, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V RoHS Compliant: Yes758
    • 500:$0.8650
    • 250:$0.9210
    • 100:$0.9780
    • 50:$1.0800
    • 25:$1.1700
    • 10:$1.2700
    • 1:$1.4800
    IPB083N10N3 G
    DISTI # 726-IPB083N10N3G
    Infineon Technologies AGMOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    13901
    • 1:$1.4700
    • 10:$1.2600
    • 100:$0.9680
    • 500:$0.8560
    • 1000:$0.6750
    • 2000:$0.5990
    • 10000:$0.5770
    IPB083N10N3GATMA1
    DISTI # 726-IPB083N10N3GATMA
    Infineon Technologies AGMOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    2169
    • 1:$1.4700
    • 10:$1.2600
    • 100:$0.9680
    • 500:$0.8560
    • 1000:$0.6750
    • 2000:$0.5990
    • 10000:$0.5770
    IPB083N10N3GATMA1
    DISTI # 8977361P
    Infineon Technologies AGMOSFET N-CHANNEL 100V 80A OPTIMOS TO263, RL3216
    • 2000:£0.4840
    • 800:£0.6140
    • 400:£0.6940
    • 80:£0.9000
    IPB083N10N3GATMA1
    DISTI # IPB083N10N3GATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO263-3664
    • 500:$0.6081
    • 100:$0.6306
    • 25:$0.6757
    • 5:$0.7523
    • 1:$0.8514
    IPB083N10N3 G
    DISTI # TMOSP9693
    Infineon Technologies AGN-CH 100V80A8mOhm TO263-3
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$0.7216
    • 2000:$0.6804
    • 3000:$0.6391
    • 5000:$0.5773
    • 7000:$0.5567
    IPB083N10N3GATMA1
    DISTI # 2443432
    Infineon Technologies AGMOSFET, N CH, 100V, 80A, TO-263-3739
    • 500:£0.6670
    • 250:£0.7100
    • 100:£0.7530
    • 10:£1.0300
    • 1:£1.3100
    IPB083N10N3GATMA1
    DISTI # 2443432
    Infineon Technologies AGMOSFET, N CH, 100V, 80A, TO-263-3
    RoHS: Compliant
    758
    • 1000:$1.0200
    • 500:$1.2900
    • 100:$1.4600
    • 10:$1.9000
    • 1:$2.2200
    IPB083N10N3GInfineon Technologies AG100V,80A,N Channel Power MOSFET800
    • 1:$1.0500
    • 100:$0.8800
    • 500:$0.7700
    • 1000:$0.7500
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    MOSFET N-CH 100V 80A D2PAK
    Availability
    Stock:
    12
    On Order:
    1995
    Enter Quantity:
    Current price of IPB083N10N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.47
    $1.47
    10
    $1.26
    $12.60
    100
    $0.97
    $96.80
    500
    $0.86
    $428.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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