PartNumber | IPB083N10N3 G | IPB083N10N3G | IPB083N10N3 |
Description | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 | |
Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 80 A | - | - |
Rds On Drain Source Resistance | 7.2 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 55 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 125 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | XPB083N10 | OptiMOS 3 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 45 S | - | - |
Fall Time | 8 ns | - | 8 ns |
Product Type | MOSFET | - | - |
Rise Time | 42 ns | - | 42 ns |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 31 ns | - | 31 ns |
Typical Turn On Delay Time | 18 ns | - | 18 ns |
Part # Aliases | IPB083N10N3GATMA1 IPB83N1N3GXT SP000458812 | - | - |
Unit Weight | 0.068654 oz | 0.068654 oz | 0.068654 oz |
Part Aliases | - | G IPB083N10N3 IPB083N10N3GXT SP000458812 | IPB083N10N3GATMA1 IPB083N10N3GXT SP000458812 |
Package Case | - | TO-263-3 | TO-263-3 |
Pd Power Dissipation | - | - | 125 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 80 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Rds On Drain Source Resistance | - | - | 8.2 mOhms |