STGW75M65DF2

STGW75M65DF2
Mfr. #:
STGW75M65DF2
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors PTD HIGH VOLTAGE
Lifecycle:
New from this manufacturer.
Datasheet:
STGW75M65DF2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGW75M65DF2 more Information STGW75M65DF2 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.65 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
120 A
Pd - Power Dissipation:
468 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGW75M65DF2
Continuous Collector Current Ic Max:
120 A
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
+/- 250 uA
Product Type:
IGBT Transistors
Factory Pack Quantity:
600
Subcategory:
IGBTs
Unit Weight:
0.211644 oz
Tags
STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Part # Mfg. Description Stock Price
STGW75M65DF2
DISTI # 497-16974-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
Min Qty: 1
Container: Tube
600In Stock
  • 2500:$2.9120
  • 500:$3.6254
  • 100:$4.2588
  • 25:$4.9140
  • 10:$5.1980
  • 1:$5.7900
STGW75M65DF2
DISTI # STGW75M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW75M65DF2)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 6000:$2.5900
  • 3000:$2.6900
  • 1800:$2.7900
  • 1200:$2.8900
  • 600:$3.0900
STGW75M65DF2
DISTI # STGW75M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 120A 3-Pin TO-247 Tube (Alt: STGW75M65DF2)
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGW75M65DF2
DISTI # 20AC4225
STMicroelectronicsPTD HIGH VOLTAGE
RoHS: Not Compliant
0
  • 1:$2.6000
STGW75M65DF2
DISTI # 511-STGW75M65DF2
STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
RoHS: Compliant
585
  • 1:$5.5000
  • 10:$4.6800
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4500
Image Part # Description
HGTG30N60A4D

Mfr.#: HGTG30N60A4D

OMO.#: OMO-HGTG30N60A4D

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG30N60A4D

Mfr.#: HGTG30N60A4D

OMO.#: OMO-HGTG30N60A4D-ON-SEMICONDUCTOR

IGBT Transistors 600V N-Channel IGBT SMPS Series
Availability
Stock:
595
On Order:
2578
Enter Quantity:
Current price of STGW75M65DF2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.50
$5.50
10
$4.68
$46.80
100
$4.05
$405.00
250
$3.84
$960.00
500
$3.45
$1 725.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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