IPB77N06S212ATMA2

IPB77N06S212ATMA2
Mfr. #:
IPB77N06S212ATMA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_55/60V
Lifecycle:
New from this manufacturer.
Datasheet:
IPB77N06S212ATMA2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB77N06S212ATMA2 DatasheetIPB77N06S212ATMA2 Datasheet (P4-P6)IPB77N06S212ATMA2 Datasheet (P7-P8)
ECAD Model:
More Information:
IPB77N06S212ATMA2 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Configuration:
Single
Qualification:
AEC-Q101
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
IPB77N06S2-12 SP001061294
Unit Weight:
0.139332 oz
Tags
IPB77N06S2, IPB77, IPB7, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Transistor MOSFET N-CH 55V 77A 3-Pin TO-263 T/R
***et
Trans MOSFET N-CH 55V 77A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 55V 77A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB77N06S212ATMA2
DISTI # V36:1790_06384641
Infineon Technologies AGTrans MOSFET N-CH 55V 77A Automotive 3-Pin(2+Tab) D2PAK T/R0
  • 1000:$0.7565
IPB77N06S212ATMA2
DISTI # IPB77N06S212ATMA2-ND
Infineon Technologies AGMOSFET N-CH 55V 77A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$0.9887
IPB77N06S212ATMA2
DISTI # SP001061294
Infineon Technologies AGTrans MOSFET N-CH 55V 77A 3-Pin TO-263 T/R (Alt: SP001061294)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 23990
  • 10000:€0.7359
  • 6000:€0.7879
  • 4000:€0.8489
  • 2000:€0.9199
  • 1000:€1.1039
IPB77N06S212ATMA2
DISTI # IPB77N06S212ATMA2
Infineon Technologies AGTrans MOSFET N-CH 55V 77A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB77N06S212ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8249
  • 6000:$0.8399
  • 4000:$0.8689
  • 2000:$0.9009
  • 1000:$0.9349
IPB77N06S212ATMA2
DISTI # IPB77N06S212ATMA2
Infineon Technologies AGTrans MOSFET N-CH 55V 77A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB77N06S212ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.8249
  • 6000:$0.8399
  • 4000:$0.8689
  • 2000:$0.9009
  • 1000:$0.9349
IPB77N06S212ATMA2
DISTI # 726-IPB77N06S212ATMA
Infineon Technologies AGMOSFET N-CHANNEL_55/60V819
  • 1:$1.4800
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6750
  • 2000:$0.5990
  • 10000:$0.5770
IPB77N06S212ATMA2
DISTI # XSKDRABV0021220
Infineon Technologies AG 
RoHS: Compliant
18990 in Stock0 on Order
  • 18990:$1.1600
  • 1000:$1.2500
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Availability
Stock:
819
On Order:
2802
Enter Quantity:
Current price of IPB77N06S212ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.48
$1.48
10
$1.26
$12.60
100
$0.97
$96.80
500
$0.86
$428.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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